About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
APT70GR65B2DU40


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 5.9543
Multiples of: 1

         TubeSi     
APT45GR65BSCD10


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 0
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USD 5.9614
Multiples of: 1

         TubeSi     
IXGH50N90B2D1


IGBT Transistors 50 Amps 900V 2.7 Rds
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IXYS Availability : 0
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USD 6.0062
Multiples of: 30

Single900 V2.2 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole400 W- 55 C+ 150 CIxgh50n90
IKFW75N60ETXKSA1


IGBT Transistors Infineons 600 V, 50 A hard-switching TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO247 advanced isolation package.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 6.0249
Multiples of: 1

Single600 V1.5 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole178 W- 40 C+ 175 C600V Trenchstop
IXYH24N90C3


IGBT Transistors GenX3 900V XPT IGBTs
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IXYS Availability : 0
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USD 6.044
Multiples of: 1

Single900 V2.3 V30 V46 A100 nA  TO - 247AD - 3TubeSiThrough Hole240 W- 55 C+ 175 CIxyh24n90
IXGA30N120B3


IGBT Transistors GenX3 1200V IGBT
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IXYS Availability : 0
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USD 6.045
Multiples of: 1

Single1.2 kV2.96 V20 V60 A100 nA  TO - 263 - 3TubeSiSmd/Smt300 W- 55 C+ 150 CIxga30n120
IRG4PSH71UDPBF


Transistor: IGBT; 1200V; 99A; 350W; SUPER247
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Infineon Availability : 0
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USD 6.0512
Multiples of: 1

Single1.2 kV2.7 V+/- 20 V99 A100 nA350 W TO - 274AATubeSiThrough Hole350 W- 55 C+ 150 C 
IXYP30N120C3


IGBT Transistors GenX3 1200V XPT IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 0
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USD 6.077
Multiples of: 1

Single1200 V3.7 V30 V75 A100 nA  TO - 220 - 3TubeSiThrough Hole500 W- 55 C+ 175 CIxyp30n120
AIKW50N65DF5XKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 6.077
Multiples of: 1

         TubeSi    Trenchstop 5 F5
IRGPS40B120UPBF


IGBT Transistors 1200V UltraFast 8-25kHz Single IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 6.0986
Multiples of: 1

Single1.2 kV3.5 V+/- 20 V80 A 595 W TO - 274AATubeSiThrough Hole595 W- 55 C  
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