APT70GR65B2DU40 APT70GR65B2DU40 650V, 70A, V = 1.9V Typical CE(on) Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 650V NPT-IGBT family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses. Features Low Saturation Voltage Short Circuit Withstand Rated Low Tail Current High Frequency Switching Combi (IGBT and Diode) RoHS Compliant Ultra Low Leakage Current Smooth Reverse Recovery Snap-free Switching Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter Ratings Unit V Collector Emitter Voltage 650 ces V V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 134 C1 C I Continuous Collector Current T = 110C 65 A C2 C 1 I Pulsed Collector Current 280 CM SCWT Short Circuit Withstand Time: V = 600V, V = 15V, T =125C 10 s CE GE C P Total Power Dissipation T = 25C 595 W D C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit V Collector-Emitter Breakdown Voltage (V = 0V, I = 350 A) 650 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1.0mA, T = 25C) 3.5 5.0 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 70A, T = 25C) 1.9 2.4 GE C j V Collector-Emitter On Voltage (V = 15V, I = 70A, T = 125C) 2.4 CE(ON) GE C j Collector-Emitter On Voltage (V = 15V, I = 140A, T = 25C) 2.6 GE C j 2 Collector Cut-off Current (V = 650V, V = 0V, T = 25C) 20 350 CE GE j I A CES 2 Collector Cut-off Current (V = 650V, V = 0V, T = 125C) 200 CE GE j I Gate-Emitter Leakage Current (V = 20V) 250 nA GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT70GR65B2DU40 Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 4250 ies C Output Capacitance V = 0V, V = 25V 847 pF oes GE CE C Reverse Transfer Capacitance f = 1MHz 415 res V Gate to Emitter Plateau Voltage Gate Charge 7.0 V GEP 3 Q Total Gate Charge V = 15V 226 305 g GE Q Gate-Emitter Charge 26 35 V = 325V nC ge CE Q Gate- Collector Charge 104 140 I = 70A gc C t Turn-On Delay Time Inductive Switching (25C) 18 d(on) t Current Rise Time 49 V = 433V r CC ns t Turn-Off Delay Time 170 V = 15V d(off) GE t Current Fall Time 67 I = 70A f C 5 4 E Turn-On Switching Energy 1868 2800 R = 4.3 on2 G J 6 E Turn-Off Switching Energy 1470 2205 T = +25C off J t Turn-On Delay Time Inductive Switching (125C) 17 d(on) t Current Rise Time V = 433V 51 r CC ns t Turn-Off Delay Time V = 15V 190 d(off) GE t Current Fall Time I = 70A 74 f C 5 4 E Turn-On Switching Energy R = 4.3 2616 3920 on2 G J 6 E Turn-Off Switching Energy T = +125C 1900 2865 off J THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit Junction to Case Thermal Resistance (IGBT) 0.21 R JC C/W Junction to Case Thermal Resistance (Diode) 0.61 R Junction to Ambient Thermal Resistance 40 JA 0.22 oz W Package Weight T 6.2 g 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 5 E is the energy loss at turn-on and includes the charge stored in the freewheeling diode. on2 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off Microsemi reserves the right to change, without notice, the speci cations and information contained herein. TYPICAL PERFORMANCE CURVES 0.25 D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 t 0.3 1 t 2 0.05 0.1 t 1 t Duty Factor D = / 2 0.05 SINGLE PULSE Peak T = P x Z +T J DM JC C 0 0.00001 0.0001 0.001 0.01 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 052-6436 Rev A 5-2014 Z , THERMAL IMPEDANCE (C/W) JC P DM