About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKFW60N60EH3XKSA1


IGBT Transistors High speed hard switching 600 V, 60 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 6.104
Multiples of: 1

Single600 V1.85 V20 V63 A100 nA  TO - 247 - 3TubeSiThrough Hole164 W- 40 C+ 175 C600V Trenchstop
AIKW30N60CTXKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 6.104
Multiples of: 1

         TubeSi    600V Trenchstop
IRG4PC60UPBF


IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT
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Infineon Availability : 0
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USD 6.1113
Multiples of: 1

Single600 V2 V+/- 20 V75 A   TO - 247 - 3Tube Through Hole520 W- 55 C+ 150 C 
IKW50N60TA


Infineon Technologies IGBT Transistors 600V 50A 100nA
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USD 6.1286
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Single600 V1.95 V20 V50 A100 nA  TO - 247TubeSiThrough Hole333 W- 40 C+ 150 CIkw50n60
IRG4PSC71KPBF


Transistor: IGBT; 600V; 85A; 350W; SUPER247
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Infineon Availability : 0
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USD 6.1428
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Single600 V2.3 V+/- 20 V85 A 350 W TO - 274AATubeSiThrough Hole350 W- 55 C  
IXYH40N65C3H1


IGBT Transistors 650V/80A XPT Copacked TO-247
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IXYS Availability : 0
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USD 6.1439
Multiples of: 1

Single650 V1.85 V30 V80 A100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 175 CIxyh40n65
STGW25S120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 6.1545
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Single1.2 kV1.6 V+/- 20 V50 A250 nA  TO 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
IXGH17N100U1


IGBT Transistors 17 Amps 1000V
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IXYS Availability : 0
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USD 6.1564
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Single1000 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxgh17n100
IRG4BC40U


IGBTs 600V 40A TO-220 (TO-220-3) RoHS
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Infineon Availability : 0
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USD 6.1679
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         Tube - Packed      
GT50J325


IGBT, 600V, TO-3P(LH)
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Toshiba Availability : 0
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USD 6.1681
Multiples of: 1

                
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