About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW40S120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 7.0257

Multiples of: 1

Single1.2 kV1.65 V+/- 20 V80 A250 nA  TO 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 C900 - 1300V Igbts
APT44GA60BD30


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip Availability : 0
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USD 7.036

Multiples of: 1

      337 W   POWER MOS 8®, PT     
IXGH32N60BU1


IGBT Transistors 60 Amps 600V 2.3 Rds
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IXYS Availability : 0
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USD 7.0618

Multiples of: 1

Single600 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxgh32n60
FGL35N120FTDTU


Fairchild Semiconductor IGBT Transistors 1200V 35A Trench IGBT
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ON Semiconductor Availability : 0
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USD 7.0715

Multiples of: 60

         TubeSi    Fgl35n120ftd
APT50GS60BRDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequency - Combi
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Microchip Availability : 0
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USD 7.0794

Multiples of: 60

Single600 V2.8 V30 V93 A100 nA  TO - 247 - 3TubeSiThrough Hole415 W- 55 C+ 150 C 
IRGP20B120UD-EP


IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT
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Infineon Availability : 0
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USD 7.1087

Multiples of: 63

Single1.2 kV3.05 V+/- 20 V40 A   TO - 247 - 3Tube Through Hole300 W- 55 C+ 150 C 
IXGH17N100


IGBT Transistors 17 Amps 1000V 4 Rds
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IXYS Availability : 0
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USD 7.1173

Multiples of: 1

Single1000 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxgh17n100
IRG7PH46UPBF


IGBT Transistors 1200V 108A
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Infineon Availability : 0
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USD 7.1875

Multiples of: 1

Single1.2 kV2 V+/- 30 V130 A200 nA469 W TO - 247TubeSiThrough Hole469 W- 55 C+ 175 C 
IRG7PH42UD-EP


IGBT Transistors 1200V Trench IGBT Generic Ind App
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Infineon Availability : 0
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USD 7.1998

Multiples of: 1

Single1.2 kV2 V+/- 30 V85 A 320 W TO - 247Tube Through Hole - 55 C  
IRGP4790DPBF


Transistor: IGBT; 650V; 140A; 455W; TO247-3
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Infineon Availability : 0
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USD 7.2028

Multiples of: 1

      455 W         
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