About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGPR20NS43HRTL


IGBT Transistors 430V 20A 1.6V Vce Ignition IGBT
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ROHM Availability : 708
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USD 0.9027

Multiples of: 1

Single460 V1.6 V10 V20 A0.6 mA Aec - Q101TO - 263 - 3Cut Tape Smd/Smt107 W- 40 C+ 175 C 
NCE20TD60B


TO-220 IGBTs ROHS
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NCE Power Availability : 708
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USD 0.9813

Multiples of: 1

                
NCE30TD60BD


IGBTs TO-263 RoHS
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NCE Power Availability : 703
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USD 0.9738

Multiples of: 1

                
IKW50N65F5FKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 698
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USD 2.484

Multiples of: 1

Single650 V1.6 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 175 CIkw50n65
RGTV60TS65GC11


IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT
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ROHM Availability : 694
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USD 2.8639

Multiples of: 1

Single650 V1.5 V30 V60 A200 nA  TO - 247N - 3TubeSiThrough Hole194 W- 40 C+ 175 C 
RGCL60TS60GC11


IGBT Trench Field Stop 600 V 48 A 111 W Through Hole TO-247N
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ROHM Availability : 691
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USD 2.0815

Multiples of: 1

Single600 V1.4 V30 V48 A200 nA  TO - 247 - 3BulkSiThrough Hole111 W- 40 C+ 175 C 
FGB7N60UNDF


IGBT Transistors 600V 7A NPT IGBT
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ON Semiconductor Availability : 688
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USD 1.0661

Multiples of: 1

Single600 V2.1 V+/- 20 V14 A+/- 10 uA83 W TO - 263AB (D2 PAK)TubeSiSmd/Smt83 W- 55 C+ 150 CFgb7n60undf
IKP20N60T


IGBT Transistors LOW LOSS DuoPack 600V 20A
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Infineon Availability : 688
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USD 1.357

Multiples of: 1

Single600 V1.5 V+/- 20 V41 A100 nA  TO - 220 - 3TubeSiThrough Hole166 W- 40 C+ 150 CIkp20n60
IGW20N60H3


Infineon Technologies IGBT Transistors 600V HI SPEED SW IGBT
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Infineon Availability : 686
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USD 1.403

Multiples of: 1

Single600 V2.4 V20 V40 A100 nA  PG - TO - 247 - 3TubeSiThrough Hole170 W- 40 C+ 175 CIgw20n60
IKFW75N65EH5XKSA1


IGBT Trench Field Stop 650V 80A 148W Through Hole PG-HSIP247-3-2
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Infineon Availability : 683
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USD 5.98

Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
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