Ignition IGBT Surface Mount > 350V > NGB8206AN 2 Pb NGB8206AN - 20 A, 350 V, N-Channel Ignition IGBT, D PAK Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for CoilonPlug and DriveronCoil Applications GateEmitter ESD Protection Temperature Compensated GateCollector Voltage Clamp Limits Stress Applied to Load 20 Amps, 350 Volts Integrated ESD Diode Protection V (on) 1.3 V CE Low Threshold Voltage for Interfacing Power Loads to I = 10A, V 4.5 V Logic or Microprocessor Devices C GE Low Saturation Voltage Maximum Ratings (T = 25C unless otherwise noted) J High Pulsed Current Capability Rating Symbol Value Unit These are PbFree Devices CollectorEmitter Voltage V 390 V CES Applications Ignition Systems CollectorGate Voltage V 390 V CER GateEmitter Voltage V 15 V GE Functional Diagram 20 A DC Collector CurrentContinuous I C T = 25C Pulsed C 50 A AC Continuous Gate Current I 1.0 mA G Transient Gate Current I 20 mA G (t 2 ms, f 100 Hz) ESD (ChargedDevice Model) ESD 2.0 kV ESD (Human Body Model) ESD 8.0 kV R = 1500 , C = 100 pF Additional Information ESD (Machine Model) ESD 500 V R = 0 , C = 200 pF 150 Watts Total Power Dissipation T = 25C C P D Derate above 25C 1.0 W/C Datasheet Resources Samples Operating and Storage 55 to T , T C J stg Temperature Range +175 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18Ignition IGBT Surface Mount > 350V > NGB8206AN Unclamped CollectorToEmitter Avalanche Characteristics (55 T 175C) J Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy V = 50 V, V = 5.0 V, P I = 16.7 A, R = 1000 , L = 1.8 mH, Starting T = 25C 250 CC GE k L G J V = 50 V, V = 5.0 V, P I = 14.9 A, R = 1000 , L = 1.8 mH, Starting T = 150C E 200 mJ CC GE k L G J AS V = 50 V, V = 5.0 V, P I = 14.1 A, R = 1000 , L = 1.8 mH, Starting T = 175C 180 CC GE k L G J Reverse Avalanche Energy V = 100 V, V = 20 V, P I = 25.8 A, L = 6.0 mH, Starting T = 25C E 2000 mJ CC GE k L J AS(R) 1. When surface mounted to an FR4 board using the minimum recommended pad size. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case C/W R 1.0 JC Thermal Resistance, Junction to Ambient (Note 1) R 62.5 C/W JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case T 275 C L for 5 seconds 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18