About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
VS-CPV364M4FPBF


Vishay IGBT Transistors 600 Volt 15 Amp
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay Availability : 0
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USD 48.6642

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Hex600 V +/- 20 V27 A   IMS - 2 - 13BulkSiThrough Hole - 40 C+ 150 C 
IXGH48N60C3C1


IGBT Transistors 75Amps 600V
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IXYS Availability : 0
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USD 49.3022

Multiples of: 30

        TO - 247AD - 3TubeSic    Ixgh48n60
IXYN82N120C3H1


IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack
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IXYS Availability : 0
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USD 50.089

Multiples of: 1

Single1200 V2.75 V30 V105 A100 nA  SOT - 227B - 4TubeSiSmd/Smt500 W- 55 C+ 150 CIxyn82n120
FSAM10SH60A


IGBT Transistors 600V10A SPM2
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ON Semiconductor Availability : 0
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USD 50.6128

Multiples of: 48

 600 V2.5 V 10 A 43 W SPM32 - AATube Smd/Smt   Fsam10sh60
MMIX1G320N60B3


Discrete Semiconductor Modules DISC IGBT SMPD PKG-STANDARD
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IXYS Availability : 0
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USD 51.2724

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Single          Smd/Smt1000 W- 55 C+ 150 C 
VS-CPV363M4UPBF


IGBT Transistors 600 Volt 6.8 Amp
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Vishay Availability : 0
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USD 53.6063

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Hex600 V 20 V    IMS - 2 - 13BulkSiThrough Hole - 40 C+ 150 C 
APT75GT120JRDQ3


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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Microchip Availability : 0
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USD 55.104

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          NPT, POWER MOS 7®     
VS-CPV364M4UPBF


IGBT Transistors 600 Volt 10 Amp
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Vishay Availability : 0
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USD 55.9037

Multiples of: 1

Hex600 V +/- 20 V20 A   IMS - 2 - 13BulkSiThrough Hole - 40 C+ 150 C 
IXYN100N65C3H1


IGBT Transistors 650V/166A XPT Copacked SOT-227B
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IXYS Availability : 0
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USD 56.2994

Multiples of: 1

Single650 V1.85 V30 V166 A100 nA  SOT - 227B - 4TubeSiSmd/Smt600 W- 55 C+ 175 CIxyn100n65
IXGT2N250


IGBT Transistors Disc IGBT NPT-Very Hi Voltage TO-268AA
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IXYS Availability : 0
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USD 56.3417

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Single2500 V2.6 V20 V5.5 A100 nA  TO - 268 - 3 SiSmd/Smt32 W- 55 C+ 150 C 
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