About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH36N60B3


IGBT Transistors GenX3 600V IGBTs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 289
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USD 4.6273

Multiples of: 1

        TO - 247AD - 3TubeSi    Ixgh36n60
IXGR48N60C3D1


IGBT Transistors 48 Amps 600V
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IXYS Availability : 287
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USD 8.788

Multiples of: 1

Single600 V +/- 20 V    ISOPLUS 247 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgr48n60
IKA08N65F5XKSA1


IGBT Transistors IGBT PRODUCTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 286
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USD 1.4734

Multiples of: 1

Single650 V1.6 V+/- 20 V10.8 A100 nA  TO - 220FP - 3TubeSiThrough Hole31.2 W- 40 C+ 175 CTrenchstop 5 F5
CRG40T120AK3SD


TO-247 IGBTs ROHS
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CRMICRO Availability : 286
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USD 1.7937

Multiples of: 1

                
FGA30N65SMD


IGBT Transistors 650V, 30A, Field Stop IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 286
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USD 2.275

Multiples of: 1

Single650 V2.29 V+/- 20 V60 A400 nA300 W TO - 3PN - 3TubeSiThrough Hole300 W- 55 C+ 175 CFga30n65smd
IXGH48N60A3D1


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 286
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USD 6.9332

Multiples of: 1

 600 V1.18 V20 V 100 nA  TO - 247AD - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgh48n60
GT30J122A(STA1,E,D


IGBTs TO-3PN RoHS
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Toshiba Availability : 285
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USD 1.3114

Multiples of: 1

                
IGW50N60TPXKSA1


Transistor: IGBT; 600V; 61A; 319.2W; TO247-3
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Infineon Availability : 285
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USD 1.564

Multiples of: 1

      319.2 W   Trenchstop     
IXYH20N120C3D1


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS Availability : 282
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USD 11.0923

Multiples of: 1

Single1200 V4 V30 V36 A100 nA  TO - 247AD - 3TubeSiThrough Hole230 W- 55 C+ 150 CIxyh20n120
GT15J341,S4X(S


Transistor: IGBT; 600V; 15A; 30W; TO220FP
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Toshiba Availability : 279
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USD 1.6229

Multiples of: 1

      30 W         
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