About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGB7H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A high speed
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 28
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USD 0.3424

Multiples of: 1

          Si    Stgb7h60df
SL20T65FL


TO-247 IGBTs ROHS
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SLKORMICRO Availability : 28
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USD 1.0363

Multiples of: 1

                
IXYH55N120C4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
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IXYS Availability : 28
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USD 6.5875

Multiples of: 1

Single1200 V - 30 V , + 30 V240 A    Tube Through Hole1150 W- 55 C+ 175 C1200V XPTTM Gen 10
IKQ120N60T


IGBT Transistors INDUSTRY 14
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Infineon Availability : 28
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USD 8.7739

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DG120X07T2


Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
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STARPOWER Availability : 28
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USD 10.808

Multiples of: 1

      893 W         
IXBT10N170


IGBT Transistors 10 Amps 1700V 2.3 Rds
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IXYS Availability : 28
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USD 11.256

Multiples of: 1

Single1.7 kV3.4 V20 V20 A100 nA  TO - 268 - 3TubeSiSmd/Smt140 W- 55 C+ 150 CIxbt10n170
APT45GP120BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 28
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USD 17.2654

Multiples of: 1

Single1.2 kV3.3 V30 V100 A100 nA  TO - 247 - 3TubeSiThrough Hole625 W- 55 C+ 150 C 
IXGH48N60B3C1


IGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A
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IXYS Availability : 28
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USD 28.308

Multiples of: 1

 600 V1.8 V+/- 20 V75 A100 nA  TO - 247AD - 3TubeSicThrough Hole300 W- 55 C+ 150 CIxgh48n60
IXXH80N65B4


IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
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IXYS Availability : 27
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USD 7.056

Multiples of: 1

Single650 V1.65 V20 V160 A100 nA  TO - 247AD - 3TubeSiThrough Hole625 W- 55 C+ 175 CIxxh80n65
SPT15N65T1


TO-220MF IGBTs ROHS
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SPTECH Availability : 26
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USD 0.7771

Multiples of: 1

                
DG75H12T2


Transistor: IGBT; 1.2kV; 75A
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STARPOWER Availability : 26
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USD 8.26

Multiples of: 1

                
IXBH10N170


IGBT Transistors 10 Amps 1700V 2.3 Rds
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 26
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USD 10.444

Multiples of: 1

Single1700 V2.3 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbh10n170
APT40GP60B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip Availability : 26
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USD 15.4593

Multiples of: 1

      543 W   POWER MOS 7®, PT     
STGP10M65DF2


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 25
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USD 1.1979

Multiples of: 1

         TubeSi    600 - 650V Igbts
SL40T65FL1


TO-247 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SLKORMICRO Availability : 25
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USD 1.2322

Multiples of: 1

                
RGTVX6TS65DGC13(RGTVX6TS65DGC11)


- IGBTs ROHS
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ROHM Availability : 25
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USD 2.4741

Multiples of: 1

                
BGH50N65ZF1


Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
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BASiC Semiconductor Availability : 25
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USD 10.15

Multiples of: 1

      357 W   Trench, Field Stop, SiC SBD     
APT35GP120B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 25
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USD 75.852

Multiples of: 1

      543 W   POWER MOS 7®, PT     
IGU04N60T


IGBT Transistors IGBT PRODUCTS TrenchStop
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Infineon Availability : 24
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USD 0.8016

Multiples of: 1

         TubeSi    Trenchstop Igbt
STGF10NC60KD


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics Availability : 24
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USD 0.8553

Multiples of: 1

Single600 V2 V+/- 20 V 100 nA25 W TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 CStgf10nc60kd
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