About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW15N120T2FKSA1


Trans IGBT Chip N-CH 1200V 30A 235000mW 3-Pin(3+Tab) TO-247 Tube
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 258
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USD 3.2526

Multiples of: 1

                
IKQ120N60TXKSA1


Transistor: IGBT; 600V; 120A; 833W; PG-TO247-3-46
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Infineon Availability : 233
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USD 8.3605

Multiples of: 1

      833 W   Trenchstop     
IKW30N60DTPXKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 232
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USD 1.469

Multiples of: 240

Single600 V1.6 V+/- 20 V53 A100 nA  TO - 247 - 3Tube Through Hole200 W- 40 C+ 175 C 
IHW15N120R3FKSA1


Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 232
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USD 1.7135

Multiples of: 1

Single1200 V1.48 V+/- 20 V30 A100 nA  TO - 247 - 3TubeSiThrough Hole254 W- 40 C+ 175 CRc
AOKS40B65H2AL


Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
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Alpha & Omega Availability : 232
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USD 2.106

Multiples of: 1

  2.05 V   105 W         
IKWH20N65WR6


TO-247-3 IGBTs ROHS
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Infineon Availability : 232
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USD 2.1653

Multiples of: 1

                
AOK40B65H1


Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
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Alpha & Omega Availability : 232
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USD 2.9776

Multiples of: 1

  1.9 V   150 W         
AOK40B60D1


Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
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Alpha & Omega Availability : 232
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USD 3.289

Multiples of: 1

  1.85 V   111 W         
AOK50B65H1


Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
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Alpha & Omega Availability : 232
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USD 3.328

Multiples of: 1

  1.9 V   188 W         
AOK60B65H1


Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.17mJ; Eon: 2.42mJ
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Alpha & Omega Availability : 232
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USD 3.614

Multiples of: 1

  1.88 V   250 W         
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