About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
Hot IHW30N135R3FKSA1


Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 105
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USD 1.2059
Multiples of: 1

      175 W   Trenchstop     
IKW20N60H3


IGBT Transistors 600V 20A 170W
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Infineon Availability : 105
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USD 2.3547
Multiples of: 1

Single600 V1.95 V20 V20 A100 nA170 W TO - 247TubeSiThrough Hole170 W- 40 C+ 150 CIkw20n60
IGW30N60TFKSA1


Transistor: IGBT; 600V; 30A; 187W; TO247-3
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Infineon Availability : 104
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USD 1.8343
Multiples of: 1

      187 W         
IHW30N135R5


IGBT Transistors HOME APPLIANCES 14
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Infineon Availability : 103
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USD 1.9004
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IKP15N65F5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon Availability : 103
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USD 1.9281
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 650 V2.1 V20 V30 A100 nA  TO - 220 - 3 FP  Through Hole48 W   
IXGH16N170


IGBT Transistors 32 Amps 1700 V 3.5 V Rds
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IXYS Availability : 103
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USD 9.2414
Multiples of: 1

Single1.7 kV2.7 V+/- 20 V32 A100 nA  TO - 247AD - 3TubeSiThrough Hole190 W- 55 C+ 150 CIxgh16n170
NGTB15N120LWG


IGBT Transistors 1200V/15A IGBT LPT TO-247
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ON Semiconductor Availability : 102
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USD 1.95
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 1200 V2.2 V20 V30 A100 nA156 W TO - 247TubeSiThrough Hole156 W  Ngtb15n120l
STGF7H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A high speed
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STMicroelectronics Availability : 99
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USD 1.0328
Multiples of: 1

          Si    Stgf7h60df
IXBH20N360HV


IGBT Transistors IGBT BIMSFT-VERY HIVOLT
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IXYS Availability : 99
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USD 127.3612
Multiples of: 1

Single3600 V2.9 V20 V70 A   TO - 247HV - 3TubeSiThrough Hole430 W- 55 C+ 150 C 
IGW30N65L5


IGBT Transistors INDUSTRY 14
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Infineon Availability : 98
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USD 3.6522
Multiples of: 1

                
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