About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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First...8182838485...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IHW30N160R5XKSA1


IGBT Transistors HOME APPLIANCES 14
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 29
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USD 3.9764
Multiples of: 1

Single1600 V1.85 V20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole263 W- 40 C+ 175 C 
RGTV80TS65DGC11


ROHM Semiconductor
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ROHM Availability : 29
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USD 5.8653
Multiples of: 1

                
DG75H12T2


Transistor: IGBT; 1.2kV; 75A
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STARPOWER Availability : 29
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USD 8.288
Multiples of: 1

                
IXXH150N60C3


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 29
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USD 8.3293
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          Si    Planar
IXBH10N170


IGBT Transistors 10 Amps 1700V 2.3 Rds
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IXYS Availability : 29
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USD 10.0864
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Single1700 V2.3 V20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbh10n170
BGH75N65ZF1


Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
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BASiC Semiconductor Availability : 29
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USD 10.7865
Multiples of: 1

      405 W   Trench, Field Stop, SiC SBD     
STGYA75H120DF2


IGBT Transistors Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT
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STMicroelectronics Availability : 29
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USD 12.0605
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FGH40T120SMD-F155


TO-247-3 IGBTs ROHS
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ON Semiconductor Availability : 29
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USD 14.053
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Single1200 V2 V25 V80 A400 nA  TO - 247G03 - 3TubeSiThrough Hole555 W- 55 C+ 175 CFgh40t120smd
IKQ75N120CT2XKSA1


Transistor: IGBT; 1200V; 75A; 237W; TO247-3
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Infineon Availability : 29
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USD 14.872
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      237 W   Trenchstop 2     
APT50GT120LRG


IGBT Transistors IGBT NPT Medium Frequency Single 1200 V 50 A TO-264
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Microchip Availability : 29
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USD 18.3486
Multiples of: 1

      625 W   NPT     
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