STGB30H65DFB2 STMicroelectronics

STGB30H65DFB2 Datasheet Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a DPAK package Features TAB Maximum junction temperature : T = 175 C J Low V = 1.65 V (typ.) I = 30 A CE(sat) C 2 3 Very fast and soft recovery co-packaged diode 1 Minimized tail current D PAK Tight parameter distribution Low thermal resistance Positive V temperature coefficient C(2, TAB) CE(sat) Applications G(1) Welding Power factor correction UPS Solar inverters E(3) Chargers NG1E3C2T Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better V behavior at low current CE(sat) values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGB30H65DFB2 Product summary Order code STGB30H65DFB2 Marking G30H65DFB2 Package DPAK Packing Tape and reel DS13253 - Rev 1 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STGB30H65DFB2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 50 A C I C Continuous collector current at T = 100 C 30 A C (1)(2) I Pulsed collector current 90 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage (t 10 s) 30 p Continuous forward current at T = 25 C 41 C I A F Continuous forward current at T = 100 C 24 C (1)(2) I Pulsed forward current 120 A FP P Total power dissipation at T = 25 C 167 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. 2. Defined by design, not subject to production test. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.9 R thJC Thermal resistance junction-case diode 1.47 C/W R Thermal resistance junction-ambient 62.5 thJA DS13253 - Rev 1 page 2/17