About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
SL15T120FL


260W 15A 1.2kV TO-247 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SLKORMICRO Availability : 24
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USD 0.999

Multiples of: 1

                
STGF30M65DF2


IGBT Transistors Trench gate field-stop IGBT M series 650 V 30 A low loss
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 24
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USD 1.701

Multiples of: 1

Single650 V1.55 V20 V60 A+/- 250 uA  TO - 220FP - 3 SiThrough Hole38 W- 55 C+ 175 CStgf30m65df2
Hot IKW50N60DTPXKSA1


Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
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Infineon Availability : 24
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USD 1.8902

Multiples of: 1

      159.6 W   Trenchstop     
SPT20N120F1T8TL


TO-247-3 IGBTs ROHS
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SPS Availability : 24
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USD 2.226

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GT50JR21(STA1,E,S)


Transistor: IGBT; 600V; 49A; 230W; TO3PN
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Toshiba Availability : 24
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USD 2.5984

Multiples of: 1

      230 W         
SPT40N120F1A


TO-247-3 IGBTs ROHS
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SPTECH Availability : 24
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USD 3.4244

Multiples of: 1

                
STGW40V60DF


STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 24
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USD 3.4656

Multiples of: 1

Single600 V2.35 V20 V80 A250 nA  TO - 247Tube Through Hole283 W- 55 C+ 175 C600 - 650V Igbts
SL75T120FZ


TO-264 IGBTs ROHS
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SLKORMICRO Availability : 24
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USD 4.634

Multiples of: 1

                
IKZ75N65NH5


IGBT Transistors INDUSTRY 14
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Infineon Availability : 24
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USD 5.75

Multiples of: 1

                
IXBK75N170


IGBT Transistors BIMOSFETS 1700V 200A
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IXYS Availability : 24
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USD 71.0471

Multiples of: 1

        TO - 264 - 3TubeSiThrough Hole - 55 C+ 150 CIxbk75n170
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