About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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STGFW80V60F

STMicroelectronics IGBT Transistors

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STMicroelectronics

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USD 2.879

Multiples of: 1

Single

600 V

1.85 V

+/- 20 V

120 A

250 nA

TO - 3PF

Tube

Through Hole

79 W

- 55 C

+ 175 C

600 - 650V Igbts

SKW20N60FKSA1

Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247

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Infineon

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USD 2.8932

Multiples of: 146

Tube

STGWA15S120DF3

STMicroelectronics IGBT Transistors

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STMicroelectronics

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USD 2.9043

Multiples of: 1

Single

1.2 kV

1.55 V

+/- 20 V

30 A

250 nA

TO 247 - 3

Tube

Through Hole

259 W

- 55 C

+ 175 C

900 - 1300V Igbts

IHW40N60R

Infineon Technologies IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body

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Infineon

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USD 2.91

Multiples of: 145

Single

600 V

1.65 V

+/- 20 V

40 A

100 nA

TO - 247 - 3

Tube

Through Hole

305 W

- 40 C

+ 150 C

Ihw40n60

NGTB40N135IHRWG

IGBT Transistors 1350V/40A IGBT FSII TO-24

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ON Semiconductor

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USD 2.9144

Multiples of: 1

Single

1350 V

2.4 V

25 V

80 A

100 nA

394 W

TO - 247

Tube

Through Hole

394 W

- 40 C

+ 175 C

Ngtb40n135ihr

STGWF40V60DF

IGBT Transistors IGBT & Power Bipolar

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STMicroelectronics

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USD 2.9157

Multiples of: 30

SG50N60DB

Transistor: IGBT; 600V; 50A; TO247AD

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Sirectifier

Availability : 0
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USD 2.917

Multiples of: 1

HGTG20N60A4

Transistor: IGBT; 600V; 40A; 290W; TO247

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ON Semiconductor

Availability : 0
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USD 2.9187

Multiples of: 1

IRGS4062DPBF

Transistor: IGBT; 600V; 48A; 250W; D2PAK

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Infineon

Availability : 0
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USD 2.9229

Multiples of: 1

Single

600 V

1.95 V

+/- 20 V

48 A

250 W

D2PAK

Tube

Smd/Smt

- 55 C

FGH40N60SFDTU_F085

Fairchild Semiconductor IGBT Transistors N-Ch 40A 600V FS IGBT

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ON Semiconductor

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USD 2.9268

Multiples of: 1

Single

600 V

2.3 V

+/- 20 V

80 A

+/- 400 nA

TO - 247 - 3

Tube

Sic

Through Hole

290 W

- 55 C

+ 150 C

Fgh40n60sf_F085

IRG4PC50WPBF

IGBT Transistors 600V Warp 60-150kHz

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Infineon

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USD 2.9283

Multiples of: 1

Single

600 V

2.3 V

+/- 20 V

55 A

200 W

TO - 247

Tube

Through Hole

200 W

- 55 C

STGWA20M65DF2

IGBT Transistors Trench gate field-stop IGBT M series 650 V 20 A low loss

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STMicroelectronics

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USD 2.9308

Multiples of: 1

FGA180N33ATDTU

IGBT Transistors 330V 180A PDP Trench

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ON Semiconductor

Availability : 0
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USD 2.9337

Multiples of: 1

Single

330 V

+/- 30 V

TO - 3PN - 3

Tube

Through Hole

- 55 C

+ 150 C

Fga180n33atdtu

STGW60H65DF

IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT

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STMicroelectronics

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USD 2.9412

Multiples of: 1

650 V

2.1 V

20 V

120 A

360 W

TO - 247

Tube

Through Hole

360 W

Stgw60h65df

FGH40T65SQD-F155

IGBT Transistors 650V 40A FS4 TRENCH IGBT

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ON Semiconductor

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USD 2.9484

Multiples of: 1

Single

650 V

1.6 V

80 A

400 nA

TO - 247 - 3

Tube

Through Hole

238 W

- 55 C

+ 175 C

IXGH72N60B3

IGBT Transistors 72 Amps 600V 1.7 Rds

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IXYS

Availability : 0
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USD 2.9544

Multiples of: 1

Single

600 V

20 V

TO - 247AD - 3

Tube

Through Hole

- 55 C

+ 150 C

Ixgh72n60

NGTB30N120LWG

IGBT Transistors 1200V/30A FS1 IGBT

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ON Semiconductor

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USD 2.958

Multiples of: 1

Single

1200 V

1.75 V

20 V

60 A

100 nA

560 W

TO - 247

Tube

Through Hole

560 W

- 55 C

+ 150 C

Ngtb30n120l

STGW60V60F

IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT

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STMicroelectronics

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USD 2.9622

Multiples of: 1

Single

600 V

2.35 V

+/- 20 V

80 A

375 W

TO - 247 - 3

Tube

Through Hole

375 W

- 55 C

+ 175 C

Stgw60v60f

STGW40N120KD

IGBT Transistors 40 A - 1200 V SC rugged IGBT

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STMicroelectronics

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USD 2.973

Multiples of: 30

1200 V

2.8 V

+/- 25 V

80 A

100 nA

240 W

TO - 247

Tube

Through Hole

- 55 C

+ 125 C

Stgw40n120kd

FGH40N60SMDF-F085

Trans IGBT Chip N-CH 600V 80A Automotive Rail

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0
Ship by 6 to 16 Weeks

May 2025