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On Semiconductor MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQI4N90TU


Fairchild Semiconductor MOSFET 900V N-Channel QFET
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USD 1.224

Multiples of: 1

4.2 A900 V3.3 Ohmsn - channel30 V - 55 C+ 150 C3.13 Wthrough holeI2PAK - 3Tubesi1 channel30 V enhancement  
FDPF035N06B_F152


Fairchild Semiconductor MOSFET
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USD 1.2265

Multiples of: 1

88 A60 V3.5 mOhmsn - channel 4 V- 55 C+ 175 C46.3 Wthrough holeTO - 220 - 3Tube  20 V76 nC   
NTTFD4D0N04HLTWG


MOSFET T8 40V DFN POWER CLIP 3X3 DUAL SYMMETRICAL
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USD 1.2284

Multiples of: 1

60 A40 V4.5 mOhmsN - Channel 2 V- 55 C+ 150 C26 WSMD/SMTWQFN - 3X3 - 12Cut Tape , ReelSi2 Channel- 20 V , + 20 V18 nCEnhancement  
FDMS86200_F065


Fairchild Semiconductor
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USD 1.2415

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HUFA75639S3ST_F085A


Fairchild Semiconductor MOSFET N-CHAN UltraFET Pwr 56A 100V 0.025Ohm
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USD 1.2438

Multiples of: 1

56 A100 V25 mOhmsN - Channel  - 55 C+ 175 C200 WSmd/SmtTO - 252 - 3ReelSi1 Channel     
706918BB


RFP10P03L PWR MOSFET 30V 10A T/HOLE
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by Fri. 13 Sep
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USD 1.2451

Multiples of: 1

10 A- 30 V200 mOhmsp - channel  - 55 C+ 175 C65 Wthrough holeTO - 220 - 3  1 channel10 V enhancement  
FDPF16N50T


N-Channel 500 V 16A (Tc) 38.5W (Tc) Through Hole TO-220F-3
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USD 1.2474

Multiples of: 1

16 A500 V380 mOhmsn - channel  - 55 C+ 150 C38.5 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
FDMD8440L


MOSFET FET 40V 87A 2.6 mOhm
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USD 1.248

Multiples of: 1

87 A40 V2.6 mOhmsN - Channel 1 V- 55 C+ 150 C33 WSmd/SmtPQFN - 8Cut TapeSi2 Channel20 V62 nCEnhancement  
MLD1N06CLT4G


MOSFET 62V 1A N-Channel
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USD 1.25

Multiples of: 1

1 A59 V750 mOhmsn - channel10 V - 55 C+ 150 C40 Wsmd/smtDPAK - 3Reel    enhancement  
FDB9409L-F085


MOSFET PT8 40V LL N-Channel PowerTrench MOSFET
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USD 1.2501

Multiples of: 1

90 A40 V2.3 mOhmsN - Channel 1 V- 55 C+ 175 C94 WSmd/SmtTO - 263AB - 3Cut TapeSi1 Channel20 V52 nCEnhancement  
HUF76639S3ST_F085


Fairchild Semiconductor MOSFET 50A, 100V, 0.026 Ohm N-Channel UltraFET
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USD 1.2523

Multiples of: 800

50 A100 V26 mOhmsn - channel 3 V- 55 C+ 175 C180 Wsmd/smtTO - 263 - 3Reelsi1 channel 86 nC   
FDMD84100


MOSFET 100V Dual N-Channel PowerTrench MOSFET
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USD 1.2551

Multiples of: 3000

21 A100 V32 mOhmsn - channel20 V3.1 V- 55 C+ 150 C23 Wsmd/smtPOWER - 8 3.3X5Reelsi2 channel20 V11 nC  powertrench power clip
NTB6411ANG


MOSFET NFET D2PAK 100V 72A 14MO
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USD 1.2554

Multiples of: 1

77 A100 V14 mOhmsn - channel20 V - 55 C+ 175 C217 Wsmd/smtD2PAK - 3        
FDB8860_F085


Fairchild Semiconductor MOSFET 30V N-Ch PowerTrench
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USD 1.2559

Multiples of: 800

31 A30 V1.9 mOhmsn - channel  - 55 C+ 175 C254 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V enhancement  
NDS8947


MOSFET Dual P-Ch FET Enhancement Mode
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USD 1.2589

Multiples of: 345

- 4 A- 30 V65 mOhmsp - channel20 V - 55 C+ 150 C2 Wsmd/smtSOIC - 8 NarrowReel    enhancement  
FCPF165N65S3L1


MOSFET SuperFET3 650V 165 mOhm, TO220F PKG
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USD 1.2608

Multiples of: 1

19 A650 V140 mOhmsN - Channel 2.5 V- 55 C+ 150 C35 WThrough HoleTO - 220F - 3 Si1 Channel30 V35 nCEnhancement  
FQA55N25


Fairchild Semiconductor MOSFET 250V N-Channel QFET
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USD 1.2697

Multiples of: 1

55 A250 V40 mOhmsn - channel30 V - 55 C+ 150 C310 Wthrough holeTO - 3P - 3Tubesi1 channel30 V enhancement qfet
NVMFS5830NLT1G


MOSFET Power MOSFET 40V, 185A, 2.3 mOhm, Single N-Channel, SO8-FL, Logic Level. T1G
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USD 1.275

Multiples of: 1

185 A40 V2.3 mOhmsn - channel     smd/smtDFN - 5Reelsi    aec - q101 
ATP401-TL-H


MOSFET NCH 4.5V DRIVE SERIES
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USD 1.2813

Multiples of: 255

100 A60 V3.7 mOhmsN - Channel     Smd/SmtATPAK - 3Cut TapeSi      
NTMFS3D6N10MCLT1G


MOSFET Single N-Channel Power MOSFET 100V 131A 3.6mO
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USD 1.2822

Multiples of: 1

131 A100 V3.6 mOhmsN - Channel 3 V- 55 C+ 150 C136 WSMD/SMT Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V60 nCEnhancement  
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