About SiC MOSFETs

On Semiconductor SiC MOSFETs

SiC MOSFETs

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(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NVBG080N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm , 1200 V, M1, D2PAK-7L
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USD 18.4371
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV30 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C179 WEnhancementAEC - Q101EliteSiC
NVH4L040N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?4L
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USD 19.0554
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Through Hole N - Channel1 Channel1.2 kV58 A56 mOhms- 15 V , + 25 V4.3 V106 nC- 55 C+ 175 C319 WEnhancement EliteSiC
NTBG040N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 20.0742
Multiples of: 800

SMD/SMT N - Channel1 Channel1.2 kV60 A56 mOhms- 15 V , + 25 V4.3 V106 nC- 55 C+ 175 C357 WEnhancement EliteSiC
NTHL040N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 20.6286
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Through Hole N - Channel1 Channel1.2 kV60 A56 mOhms- 15 V , + 25 V4.3 V106 nC- 55 C+ 175 C348 WEnhancement EliteSiC
NTCTR028N170M1


SiC MOSFETs SIC MOS TNR 28MOHM 1700V M1
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USD 22.1217
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NVHL040N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 23.2496
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV60 A56 mOhms- 15 V , + 25 V4.3 V106 nC- 55 C+ 175 C348 WEnhancement EliteSiC
NVHL080N120SC1A


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 23.5466
Multiples of: 30

Through Hole N - Channel1 Channel1.2 kV31 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C178 WEnhancementAEC - Q101EliteSiC
NVHL060N090SC1


SiC MOSFETs 60MOHM
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USD 25.5287
Multiples of: 450

Through Hole N - Channel1 Channel900 V46 A84 mOhms- 8 V , + 22 V4.3 V87 nC- 55 C+ 175 C221 WEnhancementAEC - Q101EliteSiC
NVHL020N090SC1


SiC MOSFETs 20MOHM 900V
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USD 26.3461
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Through Hole N - Channel1 Channel900 V118 A28 mOhms- 8 V , + 22 V4.3 V196 nC- 55 C+ 175 C503 WEnhancementAEC - Q101EliteSiC
NTBG020N090SC1


SiC MOSFETs SIC MOS 20MOHM 900V
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USD 26.676
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SMD/SMT N - Channel1 Channel900 V112 A28 mOhms- 8 V , + 22 V4.3 V200 nC- 55 C+ 175 C477 WEnhancement EliteSiC
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