e TM ADVANCED EPAD LINEAR DEVICES, INC. ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD V = -1.30V GS(th) PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode Functional replacement of Form B (NC) relays N-Channel MOSFETS matched at the factory using ALDs proven EPAD CMOS Ultra low power (nanowatt) analog and digital technology. These devices are intended for low voltage, small signal applica- circuits tions. They are excellent functional replacements for normally-closed relay appli- Ultra low operating voltage (<0.2V) analog and cations, as they are normally on (conducting) without any power applied, but digital circuits could be turned off or modulated when system power supply is turned on. These Sub-threshold biased and operated circuits MOSFETS have the unique characteristics of, when the gate is grounded, oper- Zero power fail safe circuits in alarm systems ating in the resistance mode for low drain voltage levels and in the current source Backup battery circuits mode for higher voltage levels and providing a constant drain current. Power failure and fail safe detector Source followers and high impedance buffers These MOSFETS are designed for exceptional device electrical characteristics Precision current mirrors and current sources matching. As these devices are on the same monolithic chip, they also exhibit Capacitives probes and sensor interfaces excellent temperature tracking characteristics. They are versatile as design com- Charge detectors and charge integrators ponents for a broad range of analog applications, and they are basic building Differential amplifier input stage blocks for current sources, differential amplifier input stages, transmission gates, High side switches and multiplexer applications. Besides matched pair electrical characteristics, each Peak detectors and level shifters individual MOSFET also exhibits well controlled parameters, enabling the user to Sample and Hold depend on tight design limits. Even units from different batches and different date Current multipliers of manufacture have correspondingly well matched characteristics. Discrete analog switches and multiplexers Discrete voltage comparators These depletion mode devices are built for minimum offset voltage and differen- tial thermal response, and they are designed for switching and amplifying appli- cations in single 1.5V to +/-5V systems where low input bias current, low input capacitance and fast switching speed are desired. These devices exhibit well PIN CONFIGURATIONS controlled turn-off and sub-threshold charactersitics and therefore can be used in designs that depend on sub-threshold characteristics. ALD114813 The ALD114813/ALD114913 are suitable for use in precision applications which - - V V require very high current gain, beta, such as current mirrors and current sources. IC* 1 16 IC* A sample calculation of the DC current gain at a drain current of 3mA and input G 2 15 G N2 N1 leakage current of 30pA at 25C is 3mA/30pA = 100,000,000. For most applica- M 2 M 1 tions, connect the V+ pin to the most positive voltage and the V- and IC pins to 14 D 3 D N1 N2 the most negative voltage in the system. All other pins must have voltages within + + S 4 13 V 12 V these voltage limits at all times. - - V 5 V 12 S 34 FEATURES D 6 11 D N4 N3 M 4 M 3 Depletion mode (normally ON) G 7 10 N4 G N3 Precision Gate Threshold Voltages: -1.30V +/- 0.04V Nominal R V = 0.0V of 1.3K 8 9 DS(ON) GS IC* IC* - - V V Matched MOSFET-to-MOSFET characteristics Tight lot-to-lot parametric control SCL, PCL PACKAGES Low input capacitance V match (V ) 20mV GS(th) OS ALD114913 12 High input impedance 10 typical Positive, zero, and negative V temperature coefficient - GS(th) V - V 8 IC* 1 8 DC current gain >10 IC* Low input and output leakage currents G 2 7 G N1 N2 M 1 M 2 ORDERING INFORMATION (L suffix denotes lead-free (RoHS)) D 3 6 D N1 N2 Operating Temperature Range* - S - V 12 4 V 5 0C to +70C0C to +70C 16-Pin 16-Pin 8-Pin 8-Pin SAL, PAL PACKAGES SOIC Plastic Dip SOIC Plastic Dip *IC pins are internally connected, Package Package Package Package connect to V- ALD114813SCL ALD114813PCL ALD114913SAL ALD114913PAL * Contact factory for industrial temp. range or user-specified threshold voltage values 2016 Advanced Linear Devices, Inc., Vers. 2.3 www.aldinc.com 1 of 12 E N A D E L BABSOLUTE MAXIMUM RATINGS Drain-Source voltage, V 10.6V DS Gate-Source voltage, V 10.6V GS Power dissipation 500 mW Operating temperature range SCL, PCL, SAL, PAL 0C to +70C Storage temperature range -65C to +150C Lead temperature, 10 seconds +260C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS + - V = +5V V = -5V T = 25C unless otherwise specified A ALD114813/ALD114913 Parameter Symbol Min Typ Max Unit Test Conditions Gate Threshold Voltage V -1.34 -1.30 -1.26 V I = 1A, V = 0.1V GS(th) DS DS Offset Voltage V 720 mV I = 1A OS DS V -V GS(th)1 GS(th)2 Offset VoltageTempco TC 5 V/ CV = V VOS DS1 DS2 Gate Threshold Voltage TC -1.7 mV/ CI = 1A, V = 0.1V VGS(th) DS DS Tempco 0.0 I = 20A, V = 0.1V DS DS +1.6 I = 40A, V = 0.1V DS DS Drain Source On Current I 12.0 mA V = +8.2V, V = +5V DS(ON) GS DS 3.0 V = +2.7V, V = +5V GS DS Forward Transconductance G 1.4 mmho V = +2.7V FS GS V = +7.7V DS Transconductance Mismatch G 1.8 % FS Output Conductance G 68 mho V = +2.7V OS GS V = +7.7V DS Drain Source On Resistance R 500 V = +2.7V DS(ON) GS V = +0.1V DS Drain Source On Resistance R 1.3 K V = +0.0V DS(ON) GS V = +0.1V DS Drain Source On Resistance R 7% DS(ON) Tolerance Drain Source On Resistance R 0.5 % DS(ON) Mismatch - Drain Source Breakdown BV 10 V V = V = -2.3V DSX GS Voltage I = 1.0A DS 1 Drain Source Leakage Current I 10 400 pA V = -2.3V, V =+5V DS(OFF) GS DS 4nA T = 125C A 1 Gate Leakage Current I 3 200 pA V = +5V, V = 0V GSS GS DS 1nA T =125C A Input Capacitance C 2.5 pF ISS Transfer Reverse Capacitance C 0.1 pF RSS + Turn-on Delay Time t 10 ns V = 5V, R = 5K on L + Turn-off Delay Time t 10 ns V = 5V, R = 5K off L Crosstalk 60 dB f = 100KHz 1 Notes: Consists of junction leakage currents ALD114813/ALD114913, Vers. 2.3 Advanced Linear Devices 2 of 12