AO4441 60V P-Channel MOSFET General Description Product Summary V The AO4441 uses advanced trench technology to provide DS -60V excellent R , and ultra-low low gate charge. This DS(ON) I (at V =-10V) -4A D GS device is suitable for use as a load switch or in PWM R (at V =-10V) < 100m DS(ON) GS applications. R (at V = -4.5V) < 130m DS(ON) GS SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -60 V DS Gate-Source Voltage V 20 V GS T =25C -4 Continuous Drain A I D A T =70C Current -3.1 A A B Pulsed Drain Current I -20 DM T =25C 3.1 A P W D A Power Dissipation T =70C 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 24 40 C/W R A JA Steady-State Maximum Junction-to-Ambient 54 75 C/W C Steady-State R 21 30 C/W Maximum Junction-to-Lead JL Rev.2.0: August 2013 www.aosmd.com Page 1 of 5 AO4441 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -60 V D GS DSS V =-48V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =-250A Gate Threshold Voltage -1 -2.1 -3 V GS(th) DS GS, D V =-10V, I =-4A 80 100 GS D m R Static Drain-Source On-Resistance T =125C 130 DS(ON) J V =-4.5V, I =-3A 102 130 m GS D V =-5V, I =-4A g Forward Transconductance 10 S FS DS D I =-1A,V =0V V Diode Forward Voltage -0.77 -1 V SD S GS I Maximum Body-Diode Continuous Current -4 A S DYNAMIC PARAMETERS C Input Capacitance 930 1120 pF iss V =0V, V =-30V, f=1MHz C Output Capacitance 85 pF oss GS DS C Reverse Transfer Capacitance 35 pF rss R Gate resistance f=1MHz 7.2 9 g SWITCHING PARAMETERS Q (10V) Total Gate Charge 16 20 nC g Q (4.5V) Total Gate Charge 8 10 nC g V =-10V, V =-30V, I =-4A GS DS D Q Gate Source Charge 2.5 nC gs Q Gate Drain Charge 3.2 nC gd t Turn-On DelayTime 8 ns D(on) t Turn-On Rise Time V =-10V, V =-30V, R =7.5, 3.8 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 3311..55 nnss D(off) GEN t Turn-Off Fall Time 7.5 ns f t I =-4A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 27 35 ns Q I =-4A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 32 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any a given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The SOA A curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: August 2013 www.aosmd.com Page 2 of 5