AO9926C 20V Dual N-Channel MOSFET General Description Product Summary V The AO9926C uses advanced trench technology to DS 20V 7.6A provide excellent R , low gate charge and operation I (at V =10V) DS(ON) D GS with gate voltages as low as 1.8V while retaining a 12V < 23m R (at V =10V) DS(ON) GS V rating. This device is suitable for use as a uni- GS(MAX) < 26m R (at V =4.5V) DS(ON) GS directional or bi-directional load switch. < 34m R (at V =2.5V) DS(ON) GS < 52m R (at V =1.8V) DS(ON) GS 100% R Tested g SOIC-8 D1 D2 Top View Bottom View Top View 1 S2 8 D2 G2 2 7 D2 3 6 S1 D1 4 5 D1 G1 G2 G1 S1 S2 Pin1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 20 V DS 12 Gate-Source Voltage V V GS T =25C 7.6 Continuous Drain A I D Current T =70C 6.1 A A C Pulsed Drain Current I 38 DM T =25C 2 A P W D B Power Dissipation T =70C 1.28 A T , T Junction and Storage Temperature Range -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 48 62.5 C/W R JA A D Steady-State Maximum Junction-to-Ambient 74 90 C/W R Maximum Junction-to-Lead Steady-State 32 40 C/W JL Rev 0: Sep 2010 www.aosmd.com Page 1 of 5 AO9926C Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 20 V D GS DSS V =20V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 12V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 0.4 0.75 1.1 V GS(th) DS GS D I On state drain current V =10V, V =5V 38 A GS DS D(ON) V =10V, I =7.6A 16.5 23 GS D m T =125C 25 30 J R Static Drain-Source On-Resistance V =4.5V, I =7A 18.5 26 m DS(ON) GS D V =2.5V, I =6A 24 34 m GS D V =1.8V, I =2A 32 52 m GS D g Forward Transconductance V =5V, I =7.6A 25 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 2.5 A S DYNAMIC PARAMETERS C Input Capacitance 420 525 630 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 65 95 125 pF GS DS oss C Reverse Transfer Capacitance 45 75 105 pF rss V =0V, V =0V, f=1MHz R Gate resistance 0.8 1.7 2.6 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 12.5 nC g Q (4.5V) Total Gate Charge 6 nC g V =10V, V =15V, I =7.6A GS DS D Q Gate Source Charge 1 nC gs QQ GGaattee DDrraaiinn CChhaarrggee 22 nnCC gd t Turn-On DelayTime 3 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =1.3, 7.5 ns r GS DS L R =3 t Turn-Off DelayTime 20 ns GEN D(off) t Turn-Off Fall Time 6 ns f t I =7.6A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 14 ns Q I =7.6A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 6 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep 2010 www.aosmd.com Page 2 of 5