X-On Electronics has gained recognition as a prominent supplier of APS12808L-3OBMX-BA DRAM across the USA, India, Europe, Australia, and various other global locations. APS12808L-3OBMX-BA DRAM are a product manufactured by AP Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

APS12808L-3OBMX-BA AP Memory

APS12808L-3OBMX-BA electronic component of AP Memory
APS12808L-3OBMX-BA AP Memory
APS12808L-3OBMX-BA DRAM
APS12808L-3OBMX-BA  Semiconductors

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Part No. APS12808L-3OBMX-BA
Manufacturer: AP Memory
Category: DRAM
Description: DRAM IoT RAM 128Mb OPI (x8) DDR 133MHz, 3V, Ext. Temp., BGA24
Datasheet: APS12808L-3OBMX-BA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.63 ea
Line Total: USD 3.63 
Availability - 69
Ship by Fri. 24 Jan to Tue. 28 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
69
Ship by Fri. 24 Jan to Tue. 28 Jan
MOQ : 1
Multiples : 1
1 : USD 3.63
10 : USD 3.333
100 : USD 2.959
250 : USD 2.959
500 : USD 2.871
1000 : USD 2.772
2500 : USD 2.64
4800 : USD 2.552
9600 : USD 2.497

   
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We are delighted to provide the APS12808L-3OBMX-BA from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APS12808L-3OBMX-BA and other electronic components in the DRAM category and beyond.

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APS12808L-3OBMx DDR OPI Xccela PSRAM Double-Data-Rate OPI Xccela PSRAM Specifications Features Single Supply Voltage Low Power Features o VDD = 2.7 to 3.6V o Partial Array Self-Refresh (PASR) o VDDQ = 2.7 to 3.6V o Auto Temperature Compensated Self- Refresh (ATCSR) by built-in temperature Interface: Octal SPI with DDR Xccela mode, two bytes transfers per one clock cycle sensor o User configurable refresh rate Performance: Clock rate up to 133MHz , Software Reset 266MB/s read/write throughput Reset Pin Available Organization: 128Mb, 16M x 8bits with 1024 Output Driver LVCMOS with programmable bytes page size drive strength o Column address: AY0 to AY9 Data Mask (DM) for write data o Row address: AX0 to AX13 Data Strobe (DQS) enabled highspeed read Refresh: Self-managed operation Operating Temperature Range Register Configurable write and read initial o Tc = -40C to +85C(standard range) latencies o Tc= -40C to +105C (extended range) Write Burst Length, maximum 1024 Byte, Maximum Standby Current minimum 2 Byte. o 700A 105C (extended range) Wrap & Hybrid Burst in 16/32/64/1K lengths. o 500A 85C Linear Burst Command o 280A 25C Row Boundary Crossing (RBX) o read operations can be enabled via Mode Register o RBX Write is NOT supported o RA 13 Boundary Crossing is NOT supported between 2 dies APM Octal PSRAM Datasheet.pdf - Rev. 1.1b Dec 14, 2019 1 of 26 AP Memory reserves the right to change products and/or specifications without notice 2019 AP Memory. All rights reserved APS12808L-3OBMx DDR OPI Xccela PSRAM Table of Contents 1 Table of Contents 1 Table of Contents ............................................................................................................. 2 2 Package Information ........................................................................................................ 3 3 Package Outline Drawing ................................................................................................. 4 4 Ordering Information ....................................................................................................... 5 5 Signal Table ...................................................................................................................... 6 6 Power-Up Initialization .................................................................................................... 7 6.1 Power-Up Initialization Method 1 (via. RESET pin) ............................................... 7 6.2 Power-Up Initialization Method 2 (via. Global Reset) ............................................ 8 7 Interface Description ....................................................................................................... 9 7.1 Address Space ......................................................................................................... 9 7.2 Burst Type & Length ................................................................................................ 9 7.3 Command/Address Latching ................................................................................... 9 7.4 Command Truth Table ............................................................................................ 9 7.5 Read Operation ..................................................................................................... 10 7.6 Write Operation .................................................................................................... 13 7.7 Control Registers ................................................................................................... 14 8 Electrical Specifications: ................................................................................................ 20 8.1 Absolute Maximum Ratings .................................................................................. 20 8.2 Pin Capacitance ..................................................................................................... 20 8.3 Decoupling Capacitor Requirement ...................................................................... 21 8.4 Operating Conditions ............................................................................................ 21 8.5 DC Characteristics ................................................................................................. 22 8.6 ISB Partial Array Refresh Current .......................................................................... 23 8.7 AC Characteristics ................................................................................................. 24 9 Change Log ..................................................................................................................... 26 APM Octal PSRAM Datasheet.pdf - Rev. 1.1b Dec 14, 2019 2 of 26 AP Memory reserves the right to change products and/or specifications without notice 2019 AP Memory. All rights reserved

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
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