DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a surface mount package. This device can deliver 34.6 dBm output power with 68% power efficiency at 915 MHz under the 2.8 V supply voltage. FEATURES High output power : Pout = 35.5 dBm TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 25 dBm) : Pout = 33.0 dBm TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 25 dBm) High power added efficiency : add = 65% TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 25 dBm) : add = 35% TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 25 dBm) High linear gain : GL = 16.0 dB TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 915 MHz, Pin = 10 dBm) : GL = 8.5 dB TYP. (VDS = 3.2 V, VGS = 2.5 V, f = 1 785 MHz, Pin = 10 dBm) Surface mount package : 5.7 5.7 1.1 mm MAX. Single supply : VDS = 2.8 to 6.0 V APPLICATIONS Digital cellular phones : 3.2 V GSM/DCS Dual-Band handsets Others : General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications ORDERING INFORMATION Part Number Package Marking Supplying Form NE5520379A-T1 79A A3 12 mm wide embossed taping Gate pin face the perforation side of the tape Qty 1 kpcs/reel NE5520379A-T1A 12 mm wide embossed taping Gate pin face the perforation side of the tape Qty 5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE5520379A-A Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10122EJ03V0DS (3rd edition) The mark shows major revised points. Date Published July 2003 CP(K) NE5520379A ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 15.0 V Gate to Source Voltage VGS 5.0 V Drain Current ID 1.5 A Note Drain Current (Pulse Test) ID 3.0 A Total Power Dissipation Ptot 20 W Channel Temperature Tch 125 C Storage Temperature Tstg 65 to +125 C Note Duty Cycle 50%, Ton 1 s RECOMMENDED OPERATING CONDITIONS Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Drain to Source Voltage VDS 2.8 3.2 6.0 V Gate to Source Voltage VGS 0 2.5 3.5 V Drain Current (Pulse Test) ID Duty Cycle 50%, Ton 1 s 1.75 2.0 A Input Power Pin f = 1.8 GHz, VDS = 3.6 V 24 25 26 dBm 2 Data Sheet PU10122EJ03V0DS