2N1131 www.centralsemi.com SILICON DESCRIPTION: PNP TRANSISTOR The CENTRAL SEMICONDUCTOR 2N1131 is a silicon PNP transistor mounted in a hermetically sealed package designed for medium current switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage (R=10) V 50 V BE CER Collector-Emitter Voltage V 35 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 0.6 A C Power Dissipation (T=25C) P 2.0 W C D Power Dissipation P 0.6 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=30V 1.0 A CBO CB I V =30V, T=150C 100 A CBO CB A I V=50V 100 A CBO CB I V=2.0V 100 A EBO EB BV I=100A 50 V CBO C BV I =100mA, R=10 50 V CER C BE BV I=100mA 35 V CEO C BV I=100A 5.0 V EBO E V I =150mA, I=15mA 1.5 V CE(SAT) C B V I =150mA, I=15mA 1.3 V BE(SAT) C B h V =10V, I=5.0mA 15 FE CE C h V =10V, I=150mA 20 45 FE CE C f V =10V, I =50mA, f=20MHz 50 MHz T CE C C V =10V, I =0, f=100kHz 45 pF ob CB E C V =0.5V, I =0, f=100kHz 80 pF ib EB C R0 (3-April 2013)2N1131 SILICON PNP TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (3-April 2013) www.centralsemi.com