2N2218
2N2218A
www.centralsemi.com
SILICON
DESCRIPTION:
NPN TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N2218 and
2N2218A are silicon NPN transistors manufactured by
the epitaxial planar process, and designed for small
signal general purpose and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (T =25C unless otherwise noted)
A
SYMBOL 2N2218 2N2218A UNITS
Collector-Base Voltage V 60 75 V
CBO
Collector-Emitter Voltage V 30 40 V
CEO
Emitter-Base Voltage V 5.0 6.0 V
EBO
Continuous Collector Current I 800 mA
C
Power Dissipation P 800 mW
D
Power Dissipation (T=25C) P 3.0 W
C D
Operating and Storage Junction Temperature T , T -65 to +200 C
J stg
ELECTRICAL CHARACTERISTICS: (T =25C) 2N2218 2N2218A
A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I V=50V - 10 - - nA
CBO CB
I V=60V - - - 10 nA
CBO CB
I V =60V, V=3.0V - - - 10 nA
CEV CE EB
I V=3.0V - 10 - 10 nA
EBO EB
BV I=10A 60 - 75 - V
CBO C
BV I=10mA 30 - 40 - V
CEO C
BV I=10A 5.0 - 6.0 - V
EBO E
V I =150mA, I=15mA - 0.4 - 0.3 V
CE(SAT) C B
V I =500mA, I=50mA - 1.6 - 1.0 V
CE(SAT) C B
V I =150mA, I=15mA - 1.3 - 1.2 V
BE(SAT) C B
V I =500mA, I=50mA - 2.6 - 2.0 V
BE(SAT) C B
h V =10V, I=100A 20 - 20 -
FE CE C
h V =10V, I=1.0mA 25 - 25 -
FE CE C
h V =10V, I=10mA 35 - 35 -
FE CE C
h V =10V, I=150mA 40 120 40 120
FE CE C
h V =1.0V, I=150mA 20 - 20 -
FE CE C
h V =10V, I=500mA 20 - - -
FE CE C
h V =10V, I=500mA - - 25 -
FE CE C
R1 (31-July 2013)2N2218
2N2218A
SILICON
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (T =25C) 2N2218 2N2218A
A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
f V =20V, I=20mA 250 - 250 - MHz
T CE C
C V=10V, f=100kHz - 8.0 - 8.0 pF
ob CB
t V =30V, I =150mA, I=15mA - 35 - 35 ns
on CC C B
t V =30V, I =150mA, I =I=15mA - 285 - 285 ns
off CC C B1 B2
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R1 (31-July 2013)
www.centralsemi.com