2N2221 2N2222 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N2221 and 2N2222 are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 800 mA C Power Dissipation P 500 mW D Power Dissipation (T=25C) P 1.2 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 350 C/W JA Thermal Resistance 146 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=50V - 10 nA CBO CB I V =50V, T=150C - 10 A CBO CB A I V=3.0V - 10 nA EBO EB BV I=10A 60 - V CBO C BV I=10mA 30 - V CEO C BV I=10A 5.0 - V EBO E V I =150mA, I=15mA - 0.4 V CE(SAT) C B V I =500mA, I=50mA - 1.6 V CE(SAT) C B V I =150mA, I=15mA 0.6 1.3 V BE(SAT) C B V I =500mA, I=50mA - 2.6 V BE(SAT) C B f V =20V, I =20mA, f=100MHz 250 - MHz T CE C C V =10V, I =0, f=100kHz - 8.0 pF ob CB E C V =0.5V, I =0, f=100kHz - 30 pF ib EB C R2 (24-July 2013)2N2221 2N2222 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A 2N2221 2N2222 SYMBOL TEST CONDITIONS MIN MAX MIN MAX h V =10V, I=0.1mA 20 - 35 - FE CE C h V =10V, I=1.0mA 25 - 50 - FE CE C h V =10V, I=10mA 35 - 75 - FE CE C h V =10V, I =10mA, T=-55C 15 - 35 - FE CE C A h V =10V, I=150mA 40 120 100 300 FE CE C h V =1.0V, I=150mA 20 - 50 - FE CE C h V =10V, I=500mA 25 - 40 - FE CE C TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (24-July 2013) www.centralsemi.com