2N2221A 2N2222A www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 75 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 800 mA C Power Dissipation P 500 mW D Power Dissipation (T=25C) P 1.8 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 350 C/W JA Thermal Resistance 97 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=60V 10 nA CBO CB I V =60V, T=150C 10 A CBO CB A I V =60V, V=3.0V 10 nA CEV CE EB I V=3.0V 10 nA EBO EB BV I=10A 75 V CBO C BV I=10mA 40 V CEO C BV I=10A 6.0 V EBO E V I =150mA, I=15mA 0.3 V CE(SAT) C B V I =500mA, I=50mA 1.0 V CE(SAT) C B V I =150mA, I=15mA 0.6 1.2 V BE(SAT) C B V I =500mA, I=50mA 2.0 V BE(SAT) C B 2N2221A 2N2222A MIN MAX MIN MAX h V =10V, I=0.1mA 20 - 35 - FE CE C h V =10V, I=1.0mA 25 - 50 - FE CE C h V =10V, I=10mA 35 - 75 - FE CE C h V =10V, I =10mA, T=-55C 15 - 35 - FE CE C A h V =10V, I=150mA 40 120 100 300 FE CE C h V =1.0V, I=150mA 20 - 50 - FE CE C h V =10V, I=500mA 25 - 40 - FE CE C R5 (5-December 2013)2N2221A 2N2222A SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C) 2N2221A 2N2222A A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS f V =20V, I=20mA, f=100MHz 250 - 300 - MHz T CE C C V =10V, I=0, f=100kHz - 8.0 - 8.0 pF ob CB E C V =0.5V, I=0, f=100kHz - 25 - 25 pF ib EB C h V =10V, I=1.0mA, f=1.0kHz 1.0 3.5 2.0 8.0 k ie CE C h V =10V, I =10mA, f=1.0kHz 0.2 1.0 0.25 1.25 k ie CE C -4 h V =10V, I=1.0mA, f=1.0kHz - 5.0 - 8.0 x10 re CE C -4 h V =10V, I=10mA, f=1.0kHz - 2.5 - 4.0 x10 re CE C h V =10V, I=1.0mA, f=1.0kHz 30 150 50 300 fe CE C h V =10V, I=10mA, f=1.0kHz 50 300 75 375 fe CE C h V =10V, I=1.0mA, f=1.0kHz 3.0 15 5.0 35 S oe CE C h V =10V, I=10mA, f=1.0kHz 10 100 25 200 S oe CE C rbC V =10V, I=20mA, f=31.8MHz - 150 - 150 ps c CB E NF V =10V, I =100A, R =1.0k, f=1.0kHz - - - 4.0 dB CE C S t V =30V, V =0.5V, I =150mA, I=15mA - 10 - 10 ns d CC BE C B1 t V =30V, V =0.5V, I =150mA, I=15mA - 25 - 25 ns r CC BE C B1 t V =30V, I =150mA, I =I=15mA - 225 - 225 ns s CC C B1 B2 t V =30V, I =150mA, I =I=15mA - 60 - 60 ns f CC C B1 B2 TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R5 (5-December 2013) www.centralsemi.com