2N2270 www.centralsemi.com NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2270 is a NPN silicon transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 60 V CER Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 1.0 A C Power Dissipation P 1.0 W D Power Dissipation (T=25C) P 5.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 175 C/W JA Thermal Resistance 35 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V=60V 50 nA CBO CB I V =60V, (T=150C) 50 A CBO CB C I V=5.0V 100 nA EBO EB BV I=100A 60 V CBO C BV I =100mA, R=10 60 V CER C BE BV I=100mA 45 V CEO C BV I=100A 7.0 V EBO E V I =150mA, I=15mA 0.9 V CE(SAT) C B V I =150mA, I=15mA 1.2 V BE(SAT) C B h V =10V, I=1.0mA 30 FE CE C h V =10V, I=150mA 50 200 FE CE C h V =10V, I =5.0mA, f=1.0kHz 50 275 fe CE C f V =10V, I=50mA 100 MHz T CE C C V =10V, I=0 15 pF ob CB E C V =0.5V, I=0 80 pF ib BE C NF V =10V, I =0.3mA, f=1.0kHz, CE C R =1.0k, BW=1.0Hz 10 dB G R0 (17-August 2012)2N2270 NPN SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (17-August 2012) www.centralsemi.com