2N2369A www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTOR The CENTRAL SEMICONDUCTOR 2N2369A is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CES Collector-Emitter Voltage V 15 V CEO Emitter-Base Voltage V 4.5 V EBO Continuous Collector Current I 200 mA C Peak Collector Current I 500 mA CM Power Dissipation P 360 mW D Power Dissipation (T=25C) P 1.2 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 486 C/W JA Thermal Resistance 146 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=20V 400 nA CBO CB I V =20V, T=150C 30 A CBO CB A BV I=10A 40 V CBO C BV I=10A 40 V CES C BV I=10mA 15 V CEO C BV I=10A 4.5 V EBO E V I =10mA, I=1.0mA 200 mV CE(SAT) C B V I =10mA, I =1.0mA, T=125C 300 mV CE(SAT) C B A V I =30mA, I=3.0mA 250 mV CE(SAT) C B V I =100mA, I=10mA 500 mV CE(SAT) C B V I =10mA, I=1.0mA 700 850 mV BE(SAT) C B V I =30mA, I=3.0mA 1.15 V BE(SAT) C B V I =100mA, I=10mA 1.6 V BE(SAT) C B h V =1.0V, I=10mA 40 120 FE CE C h V =0.35V, I =10mA, T=55C 20 FE CE C A h V =0.4V, I=30mA 30 FE CE C h V =1.0V, I=100mA 20 FE CE C R1 (23-June 2014)2N2369A SILICON NPN TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS f V =10V, I =10mA, f=100MHz 500 MHz T CE C C V =5.0V, I =0, f=140kHz 4.0 pF ob CB E t V =3.0V, I =10mA, I =3.0mA, I=1.5mA 12 ns on CC C B1 B2 t V =3.0V, I =10mA, I =3.0mA, I=1.5mA 18 ns off CC C B1 B2 t V =10V, I =10mA, I =I=10mA 13 ns s CC C B1 B2 TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (23-June 2014) www.centralsemi.com