2N2484 www.centralsemi.com NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2484 type is an NPN silicon transistor designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 50 mA C Power Dissipation P 360 mW D Operating and Storage Junction Temperature T T -65 to +200 C J, stg Thermal Resistance 486 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=45V 10 nA CBO CB I V =45V, T=150C 10 A CBO CB A I V=5.0V 2.0 nA CEO CE I V=5.0V 10 nA EBO EB BV I=10A 60 V CBO C BV I=10mA 60 V CEO C BV I=10A 6.0 V EBO E V I =1.0mA, I=100A 0.35 V CE(SAT) C B V V =5.0V, I=100A 0.5 0.7 V BE(ON) CE C h V =5.0V, I=1.0A 30 FE CE C h V =5.0V, I=10A 100 500 FE CE C h V =5.0V, I =10A, T=-55C 20 FE CE C A h V =5.0V, I=100A 175 FE CE C h V =5.0V, I=500A 200 FE CE C h V =5.0V, I=1.0mA 250 FE CE C h V =5.0V, I=10mA 800 FE CE C h V =5.0V, I =1.0mA, f=1.0kHz 150 900 fe CE C f V =5.0V, I =50A, f=5.0MHz 15 MHz T CE C f V =5.0V, I =0.5mA, f=30MHz 60 MHz T CE C h V =5.0V, I =1.0mA, f=1.0kHz 3.5 24 k ie CE C h V =5.0V, I =1.0mA, f=1.0kHz 40 S oe CE C -6 h V =5.0V, I =1.0mA, f=1.0kHz 800 x10 re CE C C V =5.0V, I =0, f=140kHz 6.0 pF ob CB E C V =0.5V, I =0, f=140kHz 6.0 pF ib EB C R1 (30-May 2012)2N2484 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MAX UNITS NF V =5.0V, I =10A, R=10k CE C S BW=15.7kHz, 3.0dB PTS 10Hz, 10kHz 3.0 dB NF V =5.0V, I =10A, R =10k, f=100Hz, BW=20Hz 10 dB CE C S NF V =5.0V, I =10A, R =10k, f=1.0kHz, BW=200Hz 3.0 dB CE C S NF V =5.0V, I =10A, R =10k, f=10kHz, BW=2.0kHz 2.0 dB CE C S TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (30-May 2012) www.centralsemi.com