X-On Electronics has gained recognition as a prominent supplier of 2N2904 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N2904 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N2904 Central Semiconductor

2N2904 electronic component of Central Semiconductor
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See Product Specifications
Part No.2N2904
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W
Datasheet: 2N2904 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.222 ea
Line Total: USD 2.22 
Availability - 121
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
121
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.222
10 : USD 1.892
100 : USD 1.551
250 : USD 1.452
500 : USD 1.221

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
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We are delighted to provide the 2N2904 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N2904 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N2904 2N2904A 2N2905 2N2905A www.centralsemi.com DESCRIPTION: PNP SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR 2N2904, 2N2905 series types are PNP silicon transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) 2N2904 2N2904A A SYMBOL 2N2905 2N2905A UNITS Collector-Base Voltage V 60 60 V CBO Collector-Emitter Voltage V 40 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 0.6 A C Power Dissipation P 0.8 W D Power Dissipation (T=25C) P 3.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg 2N2904 2N2904A ELECTRICAL CHARACTERISTICS: (T =25C) 2N2905 2N2905A A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=50V - 20 - 10 nA CBO CB I V =30V, VEB=0.5V - - - 50 nA CEV CE BV I=10A 60 - 60 - V CBO C BV I=10mA 40 - 60 - V CEO C BV I=10A 5.0 - 5.0 - V EBO E V I =150mA, I=15mA - 0.4 - 0.4 V CE(SAT) C B V I =500mA, I=50mA - 1.6 - 1.6 V CE(SAT) C B V I =150mA, I=15mA - 1.3 - 1.3 V BE(SAT) C B V I =500mA, I=50mA - 2.6 - 2.6 V BE(SAT) C B 2N2904 2N2905 2N2904A 2N2905A MIN MAX MIN MAX h V =10V, I =100A (2N2904, 2N2905) 20 - 35 - FE CE C h V =10V, I =100A (2N2904A, 2N2905A) 40 - 75 - FE CE C h V =10V, I =1.0mA (2N2904, 2N2905) 25 - 50 - FE CE C h V =10V, I =1.0mA (2N2904A, 2N2905A) 40 - 100 - FE CE C h V =10V, I =10mA (2N2904, 2N2905) 35 - 75 - FE CE C h V =10V, I =10mA (2N2904A, 2N2905A) 40 - 100 - FE CE C h V =10V, I=150mA 40 120 100 300 FE CE C h V =10V, I =500mA (2N2904, 2N2905) 20 - 30 - FE CE C h V =10V, I =500mA (2N2904A, 2N2905A) 40 - 50 - FE CE C R2 (6-April 2015)2N2904 2N2904A 2N2905 2N2905A PNP SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS f V =20V, I =50mA, f=100MHz 200 MHz T CE C C V =10V, f=100kHz 8.0 pF ob CB t V =30V, I =150mA, I=15mA 45 ns on CC C B t V =6.0V, I =150mA, I =I=15mA 180 ns off CC C B1 B2 TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (6-April 2015) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.
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