X-On Electronics has gained recognition as a prominent supplier of 2N2905A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N2905A Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N2905A Central Semiconductor

2N2905A electronic component of Central Semiconductor
Images are for reference only
See Product Specifications
Part No.2N2905A
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 60V; 0.6A; 800mW; TO39
Datasheet: 2N2905A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.208 ea
Line Total: USD 2.21

Availability - 2775
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2775
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 2.208
10 : USD 1.8745
100 : USD 1.5525
250 : USD 1.541
500 : USD 1.3685
1000 : USD 1.1845
5000 : USD 1.173
10000 : USD 1.1385

193
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 2.587
9 : USD 1.924
24 : USD 1.82

   
Manufacturer
Product Category
Polarisation
Kind Of Package
Case
Mounting
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Frequency
Power Dissipation
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2N2904 2N2904A 2N2905 2N2905A www.centralsemi.com DESCRIPTION: PNP SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR 2N2904, 2N2905 series types are PNP silicon transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) 2N2904 2N2904A A SYMBOL 2N2905 2N2905A UNITS Collector-Base Voltage V 60 60 V CBO Collector-Emitter Voltage V 40 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 0.6 A C Power Dissipation P 0.8 W D Power Dissipation (T=25C) P 3.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg 2N2904 2N2904A ELECTRICAL CHARACTERISTICS: (T =25C) 2N2905 2N2905A A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=50V - 20 - 10 nA CBO CB I V =30V, VEB=0.5V - - - 50 nA CEV CE BV I=10A 60 - 60 - V CBO C BV I=10mA 40 - 60 - V CEO C BV I=10A 5.0 - 5.0 - V EBO E V I =150mA, I=15mA - 0.4 - 0.4 V CE(SAT) C B V I =500mA, I=50mA - 1.6 - 1.6 V CE(SAT) C B V I =150mA, I=15mA - 1.3 - 1.3 V BE(SAT) C B V I =500mA, I=50mA - 2.6 - 2.6 V BE(SAT) C B 2N2904 2N2905 2N2904A 2N2905A MIN MAX MIN MAX h V =10V, I =100A (2N2904, 2N2905) 20 - 35 - FE CE C h V =10V, I =100A (2N2904A, 2N2905A) 40 - 75 - FE CE C h V =10V, I =1.0mA (2N2904, 2N2905) 25 - 50 - FE CE C h V =10V, I =1.0mA (2N2904A, 2N2905A) 40 - 100 - FE CE C h V =10V, I =10mA (2N2904, 2N2905) 35 - 75 - FE CE C h V =10V, I =10mA (2N2904A, 2N2905A) 40 - 100 - FE CE C h V =10V, I=150mA 40 120 100 300 FE CE C h V =10V, I =500mA (2N2904, 2N2905) 20 - 30 - FE CE C h V =10V, I =500mA (2N2904A, 2N2905A) 40 - 50 - FE CE C R2 (6-April 2015)2N2904 2N2904A 2N2905 2N2905A PNP SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS f V =20V, I =50mA, f=100MHz 200 MHz T CE C C V =10V, f=100kHz 8.0 pF ob CB t V =30V, I =150mA, I=15mA 45 ns on CC C B t V =6.0V, I =150mA, I =I=15mA 180 ns off CC C B1 B2 TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (6-April 2015) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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