X-On Electronics has gained recognition as a prominent supplier of 2N2907 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N2907 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N2907 Central Semiconductor

2N2907 electronic component of Central Semiconductor
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See Product Specifications
Part No.2N2907
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP Silicon
Datasheet: 2N2907 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.585 ea
Line Total: USD 2.58 
Availability - 3044
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3044
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 2.585
10 : USD 2.145
100 : USD 1.705
250 : USD 1.573
500 : USD 1.43
1000 : USD 1.221
2000 : USD 1.133
4000 : USD 1.1

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2N2907 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N2907 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N2906 2N2906A 2N2907 2N2907A www.centralsemi.com DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE 2N2906 2N2906A MAXIMUM RATINGS: (T =25C) SYMBOL 2N2907 2N2907A UNITS A Collector-Base Voltage V 60 60 V CBO Collector-Emitter Voltage V 40 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 400 mW D Power Dissipation (T=25C) P 1.8 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 438 C/W JA Thermal Resistance 97 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N2906 2N2906A 2N2907 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=50V - 20 - 10 nA CBO CB I V =50V, T=150C - 20 - 10 A CBO CB A I V =30V, V=0.5V - 50 - 50 nA CEV CE EB BV I=10A 60 - 60 - V CBO C BV I=10mA 40 - 60 - V CEO C BV I=10A 5.0 - 5.0 - V EBO E V I =150mA, I=15mA - 0.4 - 0.4 V CE(SAT) C B V I =500mA, I=50mA - 1.6 - 1.6 V CE(SAT) C B V I =150mA, I=15mA - 1.3 - 1.3 V BE(SAT) C B V I =500mA, I=50mA - 2.6 - 2.6 V BE(SAT) C B f V =20V, I =50mA, f=100MHz 200 - 200 - MHz T CE C C V =10V, I =0, f=1.0MHz - 8.0 - 8.0 pF ob CB E C V =2.0V, I =0, f=1.0MHz - 30 - 30 pF ib EB C t V =30V, I =150mA, I=15mA - 45 - 45 ns on CC C B1 t V =6.0V, I =150mA, I =I =15mA - 100 - 100 ns off CC C B1 B2 R4 (30-January 2012)2N2906 2N2906A 2N2907 2N2907A PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C) 2N2906 2N2907 A 2N2906A 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX h V =10V, I =0.1mA (2N2906, 2N2907) 20 - 35 - FE CE C h V =10V, I =0.1mA (2N2906A, 2N2907A) 40 - 75 - FE CE C h V =10V, I =1.0mA (2N2906, 2N2907) 25 - 50 - FE CE C h V =10V, I =1.0mA (2N2906A, 2N2907A) 40 - 100 - FE CE C h V =10V, I =10mA (2N2906, 2N2907) 35 - 75 - FE CE C h V =10V, I =10mA (2N2906A, 2N2907A) 40 - 100 - FE CE C h V =10V, I =150mA 40 120 100 300 FE CE C h V =10V, I =500mA (2N2906, 2N2907) 20 - 30 - FE CE C h V =10V, I =500mA (2N2906A, 2N2907A) 40 - 50 - FE CE C TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R4 (30-January 2012) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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