2N3053 2N3053A www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A types are epitaxial planar NPN silicon transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C) SYMBOL 2N3053 2N3053A UNITS A Collector-Base Voltage V 60 80 V CBO Collector-Emitter Voltage V 40 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 0.7 A C Power Dissipation (T=25C) P 5.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 35 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N3053 2N3053A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =30V, V=1.5V - 250 - - nA CEV CE EB I V =60V, V=1.5V - - - 250 nA CEV CE EB I V=4.0V - 250 - 250 nA EBO EB BV I=100A 60 - 80 - V CBO C BV I =100mA, R =10 (Note 1) 50 - 70 - V CER C BE BV I =100mA (Note 1) 40 - 60 - V CEO C BV I=100A 5.0 - 5.0 - V EBO E V I =150mA, I=15mA - 1.4 - 0.3 V CE(SAT) C B V I =150mA, I=15mA - 1.7 0.6 1.0 V BE(SAT) C B V V =2.5V, I=150mA - 1.7 - 1.0 V BE(ON) CE C h V =2.5V, I=150mA 25 - 25 - FE CE C h V =10V, I=150mA 50 250 50 250 FE CE C f V =10V, I=50mA, f=100MHz 100 - 100 - MHz T CE C C V =10V, I=0, f=1.0MHz - 15 - 15 pF ob CB E C V =0.5V, I=0, f=1.0MHz - 80 - 80 pF ib BE C Notes: (1) Pulse width < 300s, duty cycle < 2%. R2 (13-December 2013)2N3053 2N3053A SILICON NPN TRANSISTORS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (13-December 2013) www.centralsemi.com