2N3055 NPN
MJ2955 PNP
www.centralsemi.com
COMPLEMENTARY
DESCRIPTION:
SILICON POWER TRANSISTORS
The CENTRAL SEMICONDUCTOR 2N3055 and
MJ2955 are complementary silicon power transistors
manufactured by the epitaxial base process, mounted
in a hermetically sealed metal case, designed for
general purpose switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
C
Collector-Base Voltage V 100 V
CBO
Collector-Emitter Voltage V 70 V
CER
Collector-Emitter Voltage V 60 V
CEO
Emitter-Base Voltage V 7.0 V
EBO
Continuous Collector Current I 15 A
C
Continuous Base Current I 7.0 A
B
Power Dissipation P 115 W
D
Operating and Storage Junction Temperature T , T -65 to +200 C
J stg
Thermal Resistance 1.52 C/W
JC
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
C
SYMBOL TEST CONDITIONS MIN MAX UNITS
I V =100V, V=1.5V 1.0 mA
CEV CE EB
I V =100V, V =1.5V, T=150C 5.0 mA
CEV CE EB C
I V=30V 0.7 mA
CEO CE
I V=7.0V 5.0 mA
EBO EB
BV I=200mA 60 V
CEO C
BV I =200mA, R=100 70 V
CER C BE
V I =4.0A, I=400mA 1.1 V
CE(SAT) C B
V I =10A, I=3.3A 3.0 V
CE(SAT) C B
V V =4.0V, I=4.0A 1.5 V
BE(ON) CE C
h V =4.0V, I=4.0A 20 70
FE CE C
h V =4.0V, I=10A 5.0
FE CE C
h V =4.0V, I =1.0A, f=1.0kHz 15 120
fe CE C
f V =10V, I =0.5A, f=1.0MHz 2.5 MHz
T CE C
f V =4.0V, I =1.0A, f=1.0kHz 10 kHz
hfe CE C
I V =40V, t=1.0s 2.87 A
s/b CE
R1 (26-July 2013)2N3055 NPN
MJ2955 PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
R2
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R1 (26-July 2013)
www.centralsemi.com