X-On Electronics has gained recognition as a prominent supplier of 2N3250 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3250 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3250 Central Semiconductor

2N3250 electronic component of Central Semiconductor
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See Product Specifications
Part No.2N3250
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP Gen Pur SS
Datasheet: 2N3250 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.145 ea
Line Total: USD 2.14 
Availability - 1324
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1324
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 2.145
10 : USD 1.54
100 : USD 1.199
250 : USD 1.0769
500 : USD 1.0439
1000 : USD 0.9658
2000 : USD 0.9658
4000 : USD 0.9526
10000 : USD 0.9273

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N3250 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3250 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N3250 2N3250A 2N3251 2N3251A www.centralsemi.com SILICON DESCRIPTION: PNP TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3250, 2N3251 series devices are silicon PNP transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) 2N3250 2N3250A A SYMBOL 2N3251 2N3251A UNITS Collector-Base Voltage V 50 60 V CBO Collector-Emitter Voltage V 40 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 360 mW D Power Dissipation (T=25C) P 1.2 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 146 C/W JC Thermal Resistance 486 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =40V, V=3.0V 20 nA CEV CE EB BV I =10A (2N3250, 2N3251) 50 V CBO C BV I =10A (2N3250A, 2N3251A) 60 V CBO C BV I =10mA (2N3250, 2N3251) 40 V CEO C BV I =10mA (2N3250A, 2N3251A) 60 V CEO C BV I=10A 5.0 V EBO E V I =10mA, I=1.0mA 0.25 V CE(SAT) C B V I =50mA, I=5.0mA 0.50 V CE(SAT) C B V I =10mA, I=1.0mA 0.60 0.90 V BE(SAT) C B V I =50mA, I=5.0mA 1.20 V BE(SAT) C B 2N3250 2N3251 2N3250A 2N3251A MIN MAX MIN MAX h V =1.0V, I=0.1mA 40 - 80 - FE CE C h V =1.0V, I=1.0mA 45 - 90 - FE CE C h V =1.0V, I=10mA 50 150 100 300 FE CE C h V =1.0V, I=50mA 15 - 30 - FE CE C R1 (4-March 2014)2N3250 2N3250A 2N3251 2N3251A SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A 2N3250 2N3251 2N3250A 2N3251A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS f V =20V, I =10mA, f=100MHz 250 - 300 - MHz T CE C C V =10V, I =0, f=100kHz - 6.0 - 6.0 pF ob CB E C V =1.0V, I =0, f=100kHz - 8.0 - 8.0 pF ib EB C NF V =5.0V, I =100A, CE C R =1.0k, f=100Hz - 6.0 - 6.0 dB s t V =3.0V, V=0.5V, on CC BE I =10mA, I=1.0mA - 70 - 70 ns C B1 t V =3.0V, I=10mA, off CC C I =I=1.0mA - 225 - 250 ns B1 B2 TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (4-March 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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