2N3467 2N3468 www.centralsemi.com SILICON DESCRIPTION: PNP TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3467 and 2N3468 are silicon PNP switching transistors designed for core driver applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C) SYMBOL 2N3467 2N3468 UNITS A Collector-Base Voltage V 40 50 V CBO Collector-Emitter Voltage V 40 50 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 1.0 A C Power Dissipation P 1.0 W D Power Dissipation (T=25C) P 5.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 175 C/W JA Thermal Resistance 35 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N3467 2N3468 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=30V - 100 - 100 nA CBO CB I V =30V, T=100C - 15 - 15 A CBO CB A I V =30V, V=3.0V - 100 - 100 nA CEV CE BE I V =30V, V=3.0V - 120 - 120 nA BEV CE BE BV I=10A 40 - 50 - V CBO C BV I=10mA 40 - 50 - V CEO C BV I=10A 5.0 - 5.0 - V EBO E V I =150mA, I=15mA - 0.3 - 0.36 V CE(SAT) C B V I =500mA, I=50mA - 0.5 - 0.6 V CE(SAT) C B V I =1.0A, I=100mA - 1.0 - 1.2 V CE(SAT) C B V I =150mA, I=15mA - 1.0 - 1.0 V BE(SAT) C B V I =500mA, I=50mA 0.8 1.2 0.8 1.2 V BE(SAT) C B V I =1.0A, I=100mA - 1.6 - 1.6 V BE(SAT) C B h V =1.0V, I=150mA 40 - 25 - FE CE C h V =1.0V, I=500mA 40 120 25 75 FE CE C h V =5.0V, I=1.0A 40 - 20 - FE CE C R2 (26-July 2013)2N3467 2N3468 SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A 2N3467 2N3468 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS f V =10V, I =50mA, f=100MHz 175 - 150 - MHz T CE C C V =10V, I =0, f=100kHz - 25 - 25 pF ob CB E C V =0.5V, I =0, f=100kHz - 100 - 100 pF ib EB C t V =30V, V =2.0V, I =500mA, I =50mA - 40 - 40 ns on CC BE C B1 t V =30V, I =500mA, I =I=50mA - 90 - 90 ns off CC C B1 B2 Q V =30V, I =500mA, I=50mA - 6.0 - 6.0 nC T CC C B TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (26-July 2013) www.centralsemi.com