X-On Electronics has gained recognition as a prominent supplier of 2N3584 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3584 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3584 Central Semiconductor

2N3584 electronic component of Central Semiconductor
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See Product Specifications
Part No.2N3584
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN High Power
Datasheet: 2N3584 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 5
Multiples : 5
5 : USD 3.8873
N/A

Obsolete
0
MOQ : 30
Multiples : 30
30 : USD 10.6361
91 : USD 10.3171
12001 : USD 10.1043
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 15.444
10 : USD 13.897
30 : USD 13.481
120 : USD 11.6125
510 : USD 10.6
1020 : USD 10.0125
2520 : USD 9.6625
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N3584 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3584 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N3583 2N3584 2N3585 www.centralsemi.com DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR 2N3583 series NPN TRANSISTORS devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (T =25C) SYMBOL 2N3583 2N3584 2N3585 UNITS C Collector-Base Voltage V 250 375 500 V CBO Collector-Emitter Voltage V 175 250 300 V CEO Emitter-Base Voltage V 6.0 6.0 6.0 V EBO Continuous Collector Current I 1.0 2.0 2.0 A C Peak Collector Current I 5.0 A CM Continuous Base Current I 1.0 A B Power Dissipation P 35 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 5.0 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N3583 2N3584 2N3585 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS I V =225V, V =1.5V - 1.0 - - - - mA CEV CE EB I V =340V, V =1.5V - - - 1.0 - - mA CEV CE EB I V =450V, V =1.5V - - - - - 1.0 mA CEV CE EB I V =225V, V =1.5V, T=150C - 3.0 - - - - mA CEV CE EB C I V =300V, V =1.5V, T=150C - - - 3.0 - 3.0 mA CEV CE EB C I V =150V - 10 - 5.0 - 5.0 mA CEO CE I V =6.0V - 5.0 - 0.5 - 0.5 mA EBO BE BV I=200mA 175 - 250 - 300 - V CEO C V I =1.0A, I=125mA - 5.0 - 0.75 - 0.75 V CE(SAT) C B V I =1.0A, I=100mA - - - 1.4 - 1.4 V BE(SAT) C B V V =10V, I=1.0A - 1.4 - 1.4 - 1.4 V BE(ON) CE C h V =10V, I=100mA 40 - 40 - 40 - FE CE C h V =10V, I=500mA 40 200 - - - - FE CE C h V =2.0V, I=1.0A - - 8.0 80 8.0 80 FE CE C h V =10V, I =1.0A 10 - 25 100 25 100 FE CE C f V =10V, I=200mA, f=5.0MHz 10 - 10 - 10 - MHz T CE C C V =10V, I=0, f=1.0MHz - 120 - 120 - 120 pF ob CB E h V =30V, I=100mA, f=1.0kHz 25 350 - - - - fe CE C t V =200V, I =1.0A, I =100mA, R=200 - - - 3.0 - 3.0 s r CC C B1 L t V =200V, I =1.0A, I =I =100mA - - - 4.0 - 4.0 s s CC C B1 B2 t V =200V, I =1.0A, I =I =100mA - - - 3.0 - 3.0 s f CC C B1 B2 I V =100V 350 - 350 - 350 - mA S/b CE R3 (2-September 2014)2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R3 (2-September 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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