2N3724 2N3725 www.centralsemi.com 2N3725A DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3724, 2N3725, 2N3725A types are Silicon NPN Planar Epitaxial Transistors designed for high voltage, high current, high speed switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C) SYMBOL 2N3724 2N3725 2N3725A UNITS A Collector-Base Voltage V 50 80 80 V CBO Collector-Emitter Voltage V 30 50 50 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 1.2 A C Peak Collector Current I 1.75 A CM Power Dissipation P 0.8 0.8 1.0 W D Power Dissipation (T=25C) P 3.5 3.5 5.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N3724 2N3725 2N3725A SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS I V=50V - 10 - - - - A B CE I V=80V - - - 10 - 10 A B CE I V=40V - 1.7 - - - - A CBO CB I V =40V, T=100C - 120 - - - - A CBO CB A I V=60V - - - 1.7 - 0.5 A CBO CB I V =60V, T=100C - - - 120 - 50 A CBO CB A I V=50V - 10 - - - - A CES CE I V=80V - - - 10 - 10 A CES CE BV I=10A 50 - 80 - 80 - V CBO C BV I=10A 50 - 80 - 80 - V CES C BV I=10mA 30 - 50 - 50 - V CEO C BV I=10A 6.0 - 6.0 - 6.0 - V EBO E V I =10mA, I =1.0mA - 0.25 - 0.25 - 0.25 V CE(SAT) C B V I =100mA, I=10mA - 0.20 - 0.26 - 0.26 V CE(SAT) C B V I =300mA, I=30mA - 0.32 - 0.40 - 0.40 V CE(SAT) C B V I =500mA, I=50mA - 0.42 - 0.52 - 0.52 V CE(SAT) C B V I =800mA, I=80mA - 0.65 - 0.80 - 0.80 V CE(SAT) C B V I =1.0A, I =100mA - 0.75 - 0.95 - 0.90 V CE(SAT) C B V I =10mA, I =1.0mA - 0.76 - 0.76 - 0.76 V BE(SAT) C B V I =100mA, I=10mA - 0.86 - 0.86 - 0.86 V BE(SAT) C B V I =300mA, I=30mA - 1.1 - 1.1 - 1.0 V BE(SAT) C B V I =500mA, I=50mA 0.80 1.1 0.80 1.1 0.80 1.1 V BE(SAT) C B V I =800mA, I=80mA - 1.5 - 1.5 - 1.3 V BE(SAT) C B V I =1.0A, I =100mA - 1.7 - 1.7 0.90 1.4 V BE(SAT) C B R1 (5-December 2010)2N3724 2N3725 2N3725A NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A 2N3724 2N3725 2N3725A SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS h V =1.0V, I=10mA 30 - 30 - 30 - FE CE C h V =1.0V, I=100mA 60 150 60 150 60 150 FE CE C h V =1.0V, I=300mA 40 - 40 - 40 - FE CE C h V =1.0V, I=500mA 35 - 35 - 35 - FE CE C h V =2.0V, I=800mA 25 - 20 - 25 - FE CE C h V =5.0V, I=1.0A 30 - 25 - 25 - FE CE C h V =5.0V, I=1.5A - - - - 20 - FE CE C f V =10V, I=50mA, f=100MHz 300 - 300 - 300 - MHz T CE C C V =10V, I=0, f=1.0MHz - 12 - 10 - 10 pF ob CB E C V =0.5V, I=0, f=1.0MHz - 55 - 55 - 55 pF ib EB C t V =30V, I =500mA, I =50mA - 10 - 10 - 10 ns d CC C B1 t V =30V, I =500mA, I =50mA - 30 - 30 - 30 ns r CC C B1 t V =30V, I =500mA, I =50mA - 35 - 35 - 35 ns on CC C B1 t V =30V, I =500mA, I =I =50mA - 50 - 50 - 50 ns s CC C B1 B2 t V =30V, I =500mA, I =I =50mA - 25 - 25 - 25 ns f CC C B1 B2 t V =30V, I =500mA, I =I =50mA - 60 - 60 - 60 ns off CC C B1 B2 t V =30V, I =1.0A, I =I =100mA - - - - - 50 ns on CC C B1 B2 t V =30V, I =1.0A, I =I =100mA - - - - - 50 ns off CC C B1 B2 TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (5-December 2010) www.centralsemi.com