X-On Electronics has gained recognition as a prominent supplier of 2N3763 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3763 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3763 Central Semiconductor

2N3763 electronic component of Central Semiconductor
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See Product Specifications
Part No.2N3763
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Central Semiconductor Bipolar Transistors - BJT Small Signal
Datasheet: 2N3763 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.872 ea
Line Total: USD 3.87 
Availability - 178
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
178
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 3.872
10 : USD 3.289
25 : USD 3.168
100 : USD 2.783
250 : USD 2.684
500 : USD 2.343
1000 : USD 2.211
2500 : USD 2.167
5000 : USD 2.09

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N3763 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3763 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DATA SHEET 2N3762 2N3763 PNP SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3762 and 2N3763 types are Silicon PNP Epitaxial Planar Transistors designed for core driver applications. MAXIMUM RATINGS (T =25C) A SYMBOL 2N3762 2N3763 UNITS Collector-Base Voltage V 40 60 V CBO Collector-Emitter Voltage V 40 50 V CEO Emitter-Base Voltage V 5.0 V EBO Collector Current I 1.5 A C Power Dissipation P 1.0 W D Power Dissipation (T =25C) P 4.0 W C D Operating and Storage Junction Temperature T ,T -65 to +200 C J stg Thermal Resistance 175 C/W JA Thermal Resistance 44 C/W JC ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A 2N3762 2N3763 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =Rated V , V =2.0V 200 200 nA BL CE CBO EB I V =Rated V , V =2.0V 100 100 nA CEV CE CBO EB I V =Rated V , V =2.0V. T =100C 10 10 A CEV CB CBO EB A BV I =10 A 40 60 V CBO C BV I =10mA 40 50 V CEO C BV I =10A 5.0 5.0 V EBO E V I =10mA, I=1.0mA 0.10 0.10 V CE(SAT) C B V I =150mA, I=15mA 0.22 0.22 V CE(SAT) C B V I =500mA, I=50mA 0.50 0.50 V CE(SAT) C B V I =1.0A, I=100mA 0.90 0.90 V CE(SAT) C B V I =10mA, I=1.0mA 0.80 0.80 V BE(SAT) C B V I =150mA, I=15mA 1.00 1.00 V BE(SAT) C B V I =500mA, I=50mA 1.20 1.20 V BE(SAT) C B V I =1.0A, I =100mA 0.90 1.40 0.90 1.40 V BE(SAT) C B (CONTINUED ON REVERSE SIDE) R1 2N3762 / 2N3763 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Continued) 2N3762 2N3763 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS h V =1.0V, I=10mA 35 35 FE CE C h V =1.0V, I=150mA 40 40 FE CE C h V =1.0V, I=500mA 35 35 FE CE C h V =1.5V, I=1.0A 20 80 30 120 FE CE C h V =5.0V, I=1.5A 20 30 FE CE C h V =10V, I=50mA, f=100MHz 1.8 1.5 fe CE C C V =10V, I =0, f=100kHz 15 15 pF ob CB E C V =0.5V, I =0, f=100kHz 80 80 pF ib BE C t V =30V, V =2.0V, I =1.0A, I =100mA 8.0 8.0 ns d CC BE(off) C B1 t V =30V, V =2.0V, I =1.0A, I =100mA 3.5 3.5 ns r CC BE(off) C B1 t V =30V, I =1.0A, I =-I =100mA 80 80 ns s CC C B1 B2 t V =30V, I =1.0A, I =-I =100mA 35 35 ns f CC C B1 B2 Q V =30V, I =1.0A, I =100mA 30 30 pC CC C B JEDEC TO-39 PACKAGE - MECHANICAL OUTLINE A B DIMENSIONS INCHES MILLIMETERS D SYMBOL MIN MAX MIN MAX A (DIA) 0.335 0.370 8.51 9.40 B (DIA) 0.315 0.335 8.00 8.51 C C - 0.040 - 1.02 D 0.240 0.260 6.10 6.60 E E 0.500 - 12.70 - F (DIA) 0.016 0.021 0.41 0.53 G (DIA) 0.200 5.08 H 0.100 2.54 I 0.028 0.034 0.71 0.86 F J 0.029 0.045 0.74 1.14 TO-39 (REV: R1) G H LEAD 2 LEAD 1 LEAD 3 LEAD CODE: 45 J 1. Emitter 2. Base 3. Collector I R1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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