2N3789 2N3791 2N3790 2N3792 www.centralsemi.com SILICON DESCRIPTION: PNP POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE 2N3789 2N3790 MAXIMUM RATINGS: (T =25C) SYMBOL 2N3791 2N3792 UNITS C Collector-Base Voltage V 60 80 V CBO Collector-Emitter Voltage V 60 80 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 10 A C Continuous Base Current I 4.0 A B Power Dissipation P 150 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 1.17 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N3789 2N3790 2N3791 2N3792 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =Rated V , V=1.5V - 1.0 - 1.0 mA CEV CE CEO EB I V =Rated V , V =1.5V, T=150C - 5.0 - 5.0 mA CEV CE CEO EB C I V=7.0V - 5.0 - 5.0 mA EBO EB BV I=200mA 60 - 80 - V CEO C V I =4.0A, I =400mA (2N3789, 2N3790) - 1.0 - 1.0 V CE(SAT) C B V I =5.0A, I =500mA (2N3791, 2N3792) - 1.0 - 1.0 V CE(SAT) C B V V =2.0V, I =5.0A (2N3789, 2N3790) - 2.0 - 2.0 V BE(ON) CE C V V =2.0V, I =5.0A (2N3791, 2N3792) - 1.8 - 1.8 V BE(ON) CE C V V =4.0V, I=10A - 4.0 - 4.0 V BE(ON) CE C h V =2.0V, I =1.0A (2N3789, 2N3790) 25 90 25 90 FE CE C h V =2.0V, I =1.0A (2N3791, 2N3792) 50 180 50 180 FE CE C h V =2.0V, I =3.0A (2N3789, 2N3790) 15 - 15 - FE CE C h V =2.0V, I =3.0A (2N3791, 2N3792) 30 - 30 - FE CE C f V =10V, I =500mA, f=1.0MHz 4.0 - 4.0 - MHz T CE C R2 (31-July 2013)2N3789 2N3791 2N3790 2N3792 SILICON PNP POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter R2 Case) Collector MARKING: FULL PART NUMBER R2 (31-July 2013) www.centralsemi.com