2N3798 2N3798A 2N3799 2N3799A www.centralsemi.com SILICON DESCRIPTION: PNP TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3798, 2N3799 series devices are silicon PNP epitaxial planar transistors designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) 2N3798 2N3798A A SYMBOL 2N3799 2N3799A UNITS Collector-Base Voltage V 60 90 V CBO Collector-Emitter Voltage V 60 90 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 50 mA C Power Dissipation P 360 mW D Power Dissipation (T=25C) P 1.2 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 0.49 C/mW JA Thermal Resistance 150 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=50V 10 nA CBO CB I V =50V, T=150C 10 A CBO CB A I V=4.0V 20 nA EBO EB BV I =10A (2N3798, 2N3799) 60 V CBO C BV I =10A (2N3798A, 2N3799A) 90 V CBO C BV I =10mA (2N3798, 2N3799) 60 V CEO C BV I =10mA (2N3798A, 2N3799A) 90 V CEO C BV I=10A 5.0 V EBO E V I =100A, I=10A 0.20 V CE(SAT) C B V I =1.0mA, I=100A 0.25 V CE(SAT) C B V I =100A, I=10A 0.70 V BE(SAT) C B V I =1.0mA, I=100A 0.80 V BE(SAT) C B V V =5.0V, I=100A 0.70 V BE(ON) CE C 2N3798 2N3799 2N3798A 2N3799A MIN MAX MIN MAX h V =5.0V, I=1.0A - - 75 - FE CE C h V =5.0V, I=10A 100 - 225 - FE CE C h V =5.0V, I=100A 150 - 300 - FE CE C h V =5.0V, I =100A, T=-55C 75 - 150 - FE CE C A h V =5.0V, I=500A 150 450 300 900 FE CE C h V =5.0V, I=1.0mA 150 - 300 - FE CE C h V =5.0V, I=10mA 125 - 250 - FE CE C R1 (22-September 2014)2N3798 2N3798A 2N3799 2N3799A SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A 2N3798 2N3799 2N3798A 2N3799A SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS f V =5.0V, I=500A, f=30MHz 30 - - 30 - - MHz T CE C f* V =5.0V, I=1.0mA, f=100MHz - 80 - - 80 - MHz T CE C C* V =5.0V, I=0, f=100kHz - - 5.0 - - 5.0 pF ob CB E C* V =0.5V, I=0, f=100kHz - - 15 - - 15 pF ib EB C h V =10V, I=1.0mA, f=1.0kHz 3.0 - 15 10 - 40 k ie CE C -4 h V =10V, I=1.0mA, f=1.0kHz - - 25 - - 25 x10 re CE C h V =10V, I=1.0mA, f=1.0kHz 150 - 600 300 - 900 fe CE C h V =10V, I=1.0mA, f=1.0kHz 5.0 - 60 5.0 - 60 S oe CE C NF V =10V, I =100A, R=3.0k, CE C G f=100Hz, BW=20Hz - 4.0 7.0 - 2.5 4.0 dB NF V =10V, I =100A, R=3.0k, CE C G f=1.0kHz, BW=200Hz - 1.5 3.0 - 0.8 1.5 dB NF V =10V, I =100A, R=3.0k, CE C G f=10kHz, BW=2.0kHz - 1.0 2.5 - 0.8 1.5 dB NF V =10V, I =100A, R=3.0k, CE C G Broadband BW=10Hz to 15.7kHz - 2.5 3.5 - 1.5 2.5 dB * Limits not in accordance with JEDEC registered values. TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (22-September 2014) www.centralsemi.com