2N3866 2N3866A www.centralsemi.com NPN SILICON DESCRIPTION: HIGH FREQUENCY TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 55 V CBO Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 3.5 V EBO Continuous Collector Current I 0.4 A C Continuous Base Current I 2.0 A B Power Dissipation (T=25C) P 5.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 35 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=28V 20 A CEO CE I V =55V, V=1.5V 0.1 mA CEV CE BE(OFF) I V =30V, V =1.5V, T=200C 5.0 mA CEV CE BE(OFF) C I V=3.5V 0.1 mA EBO EB BV I =5.0mA, R=10 55 V CER C BE BV I=500A 55 V CBO C BV I=5.0mA 30 V CEO C BV I=100A 3.5 V EBO E V I =100mA, I=20mA 1.0 V CE(SAT) C B h V =5.0V, I =50mA (2N3866) 10 200 FE CE C h V =5.0V, I =50mA (2N3866A) 25 200 FE CE C h V =5.0V, I=360mA 5.0 FE CE C f V =15V, I =50mA, f=200MHz (2N3866) 500 MHz T CE C f V =15V, I =50mA, f=200MHz (2N3866A) 800 MHz T CE C C V =28V, I =0, f=1.0MHz 3.0 pF ob CB E G V =28V, P =1.0W, f=400MHz (Figure 1) 10 dB PE CC out V =28V, P =1.0W, f=400MHz (Figure 1) 45 % CC out R2 (15-September 2010)2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR Figure 1. 400MHz Test Circuit TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (15-September 2010) www.centralsemi.com