2N4030 www.centralsemi.com PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4030 is a silicon PNP transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 1.0 A C Power Dissipation P 1.25 W D Power Dissipation (T=25C) P 7.0 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 20 C/W JC Thermal Resistance 140 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=50V 50 nA CBO CB I V =50V, T=150C 50 A CBO CB A I V=5.0V 10 A EBO EB BV I=10A 60 V CBO C BV I=10mA 60 V CEO C BV I=10A 5.0 V EBO E V I =150mA, I=15mA 0.15 V CE(SAT) C B V I =500mA, I=50mA 0.5 V CE(SAT) C B V I =1.0A, I=100mA 1.0 V CE(SAT) C B V I =150mA, I=15mA 0.9 V BE(SAT) C B V V =1.0V, I=1.0A 1.2 V BE(ON) CE C V V =0.5V, I=500mA 1.1 V BE(ON) CE C h V =5.0V, I=0.1mA 30 FE CE C h V =5.0V, I=100mA 40 120 FE CE C h V =5.0V, I =100mA, T=55C 15 FE CE C A h V =5.0V, I=500mA 25 FE CE C h V =5.0V, I=1.0A 15 FE CE C R1 (2-June 2017)2N4030 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS h V =10V, I =50mA, f=100MHz 1.0 4.0 fe CE C C V =10V, I =0, f=1.0MHz 20 pF ob CB E C V =0.5V, I =0, f=1.0MHz 110 pF ib EB C t V =30V, I =500mA, I=50mA 100 ns on CC C B1 t V =30V, I =500mA, I =I =50mA 350 ns s CC C B1 B2 t V =30V, I =500mA, I =I =50mA 50 ns f CC C B1 B2 TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (2-June 2017) www.centralsemi.com