2N4036 2N4037 www.centralsemi.com DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar PNP Silicon Transistors designed for small signal, medium power, general purpose industrial applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C) SYMBOL 2N4036 2N4037 UNITS C Collector-Base Voltage V 90 60 V CBO Collector-Emitter Voltage V 65 40 V CEO Emitter-Base Voltage V 7.0 7.0 V EBO Continuous Collector Current I 1.0 A C Continuous Base Current I 0.5 A B Power Dissipation P 5.0 W D Power Dissipation (T=25C) P 1.0 W A D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 35 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N4036 2N4037 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=90V - 1.0 - - A CBO CB I V=60V - - - 0.25 A CBO CB I V =85V, V=1.5V - 100 - - A CEX CE EB I V =30V, V =1.5V, T=150C - - - 100 mA CEX CE EB C I V=7.0V - 10 - - A EBO EB I V=5.0V - - - 1.0 A EBO EB BV I=100mA 65 - 40 - V CEO C V I =150mA, I=15mA - 0.65 - 1.4 V CE(SAT) C B V I =150mA, I=15mA - 1.4 - - V BE(SAT) C B V V =10V, I=150mA - - - 1.5 V BE(ON) CE C h V =10V, I=0.1mA 20 - - - FE CE C h V =10V, I=1.0mA - - 15 - FE CE C h V =10V, I=150mA 40 140 50 250 FE CE C h V =2.0V, I=150mA 20 200 - - FE CE C h V =10V, I=500mA 20 - - - FE CE C f V =10V, I =50mA, f=20MHz 60 - 60 - MHz T CE C C V =10V, I =0, f=1.0MHz - 30 - 30 pF ob CB E t V =30V, I =150mA, I =I=15mA - 110 - - ns on CE C B1 B2 t V =30V, I =150mA, I =I=15mA - 700 - - ns off CE C B1 B2 R1 (1-April 2010)2N4036 2N4037 PNP SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (1-April 2010) www.centralsemi.com