2N4123 2N4124 NPN 2N4125 2N4126 PNP www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL 2N4123 2N4124 2N4125 2N4126 UNITS Collector-Base Voltage V 40 30 30 25 V CBO Collector-Emitter Voltage V 30 25 30 25 V CEO Emitter-Base Voltage V 5.0 5.0 4.0 4.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C) 2N4123 2N4124 2N4125 2N4126 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX UNITS I V =20V - 50 - 50 - 50 - 50 nA CBO CB I V =3.0V - 50 - 50 - 50 - 50 nA EBO EB BV I=10A 40 - 30 - 30 - 25 - V CBO C BV I=1.0mA 30 - 25 - 30 - 25 - V CEO C BV I=10A 5.0 - 5.0 - 4.0 - 4.0 - V EBO E V I =50mA, I=5.0mA - 0.3 - 0.3 - 0.4 - 0.4 V CE(SAT) C B V I =50mA, I=5.0mA - 0.95 - 0.95 - 0.95 - 0.95 V BE(SAT) C B h V =1.0V, I=2.0mA 50 150 120 360 50 150 120 360 FE CE C h V =1.0V, I=50mA 25 - 60 - 25 - 60 - FE CE C h V =10V, I=2.0mA, f=1.0kHz 50 200 120 480 50 200 120 480 fe CE C f V =20V, I=10mA, f=100MHz 250 - 300 - 200 - 250 - MHz T CE C C V =5.0V, I=0, f=100kHz - 4.0 - 4.0 - 4.5 - 4.5 pF ob CB E C V =0.5V, I=0, f=100kHz - 8.0 - 8.0 - 10 - 10 pF ib EB C NF V =5.0V, I =100A, R=1.0k, CE C S f=10Hz to 15.7kHz - 6.0 - 5.0 - 5.0 - 4.0 dB R1 (12-January 2016)2N4123 2N4124 NPN 2N4125 2N4126 PNP COMPLEMENTARY SILICON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (12-January 2016) www.centralsemi.com