2N4234 2N4235 2N4236 www.centralsemi.com DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR 2N4234, 2N4235, PNP TRANSISTORS and 2N4236 are silicon PNP transistors mounted in a hermetically sealed metal case, designed for power amplifier, power driver, and switching power supply applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL 2N4234 2N4235 2N4236 UNITS Collector-Base Voltage V 40 60 80 V CBO Collector-Emitter Voltage V 40 60 80 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 1.0 A C Peak Collector Current I 3.0 A CM Continuous Base Current I 0.2 A B Power Dissipation P 6.0 W D Power Dissipation (T=25C) P 1.0 W A D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 29 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 100 A CBO CB CBO I V =Rated V , V=1.5V 100 A CEX CE CEO BE I V =30V, V =1.5V, T =150C (2N4234) 1.0 mA CEX CE BE C I V =40V, V =1.5V, T =150C (2N4235) 1.0 mA CEX CE BE C I V =60V, V =1.5V, T =150C (2N4236) 1.0 mA CEX CE BE C I V =30V (2N4234) 1.0 mA CEO CE I V =40V (2N4235) 1.0 mA CEO CE I V =60V (2N4236) 1.0 mA CEO CE I V=7.0V 500 A EBO EB BV I =100mA (2N4234) 40 V CEO C BV I =100mA (2N4235) 60 V CEO C BV I =100mA (2N4236) 80 V CEO C V I =1.0A, I=125mA 0.6 V CE(SAT) C B V I =1.0A, I=100mA 1.5 V BE(SAT) C B V V =1.0V, I=250mA 1.0 V BE(ON) CE C R1 (12-May 2017)2N4234 2N4235 2N4236 SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS h V =1.0V, I=100mA 40 FE CE C h V =1.0V, I=250mA 30 175 FE CE C h V =1.0V, I=500mA 20 FE CE C h V =1.0V, I=1.0A 10 FE CE C h V =10V, I =50mA, f=1.0kHz 25 fe CE C f V =10V, I =100mA, f=1.0MHz 3.0 MHz T CE C C V =10V, I =0, f=100kHz 100 pF ob CB E TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (12-May 2017) www.centralsemi.com