2N4237 2N4238 2N4239 www.centralsemi.com DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR 2N4237, 2N4238, NPN TRANSISTORS and 2N4239 are silicon NPN transistors mounted in a hermetically sealed metal case, designed for power amplifier, power driver, and switching power supply applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL 2N4237 2N4238 2N4239 UNITS Collector-Base Voltage V 50 80 100 V CBO Collector-Emitter Voltage V 40 60 80 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 3.0 A C Continuous Base Current I 0.5 A B Power Dissipation P 6.0 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 29.2 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 100 A CBO CB CBO I V =45V, V =1.5V (2N4237) 100 A CEV CE EB I V =75V, V =1.5V (2N4238) 100 A CEV CE EB I V =90V, V =1.5V (2N4239) 100 A CEV CE EB I V =30V, V =1.5V, T =150C (2N4237) 1.0 mA CEV CE EB C I V =50V, V =1.5V, T =150C (2N4238) 1.0 mA CEV CE EB C I V =70V, V =1.5V, T =150C (2N4239) 1.0 mA CEV CE EB C I V =Rated V 700 A CEO CE CEO I V=6.0V 500 A EBO EB BV I =100mA (2N4237) 40 V CEO C BV I =100mA (2N4238) 60 V CEO C BV I =100mA (2N4239) 80 V CEO C V I =500mA, I=50mA 0.3 V CE(SAT) C B V I =1.0A, I=0.1A 0.6 V CE(SAT) C B V I =1.0A, I=0.1A 1.5 V BE(SAT) C B V V =1.0V, I=250mA 1.0 V BE(ON) CE C R3 (26-March 2015)2N4237 2N4238 2N4239 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS h V =1.0V, I=50mA 30 FE CE C h V =1.0V, I=250mA 30 250 FE CE C h V =1.0V, I=500mA 30 FE CE C h V =1.0V, I=1.0A 15 FE CE C h V =10V, I =100mA, f=1.0kHz 30 fe CE C f V =10V, I =100mA, f=1.0kHz 2.0 MHz T CE C C V =10V, I =0, f=100kHz 100 pF ob CB E TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R3 (26-March 2015) www.centralsemi.com