X-On Electronics has gained recognition as a prominent supplier of 2N4427 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N4427 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N4427 Central Semiconductor

2N4427 electronic component of Central Semiconductor
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See Product Specifications
Part No.2N4427
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN VHF/UHF AM
Datasheet: 2N4427 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 10
Multiples : 1
10 : USD 1.6067
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 6.3009
10 : USD 2.5954
100 : USD 2.3738
250 : USD 2.1378
500 : USD 1.8634
1000 : USD 1.7831
2000 : USD 1.7831
5000 : USD 1.7562
10000 : USD 1.6489
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the 2N4427 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N4427 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N4427 www.centralsemi.com SILICON DESCRIPTION: NPN RF TRANSISTOR The CENTRAL SEMICONDUCTOR 2N4427 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 2.0 V EBO Continuous Collector Current I 400 mA C Continuous Base Current I 400 mA B Power Dissipation P 1.0 W D Power Dissipation (T=25C) P 3.5 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =40V, V=1.5V 100 A CEV CE BE I V =12V, V =1.5V, T=150C 5.0 mA CEV CE BE C I V=12V 20 A CEO CE I V=2.0V 100 A EBO EB BV I =5.0mA, R=10 40 V CER C BE BV I=5.0mA 20 V CEO C V I =100mA, I=20mA 0.5 V CE(SAT) C B h V =5.0V, I=100mA 10 200 FE CE C h V =5.0V, I=360mA 5.0 FE CE C f V =15V, I =50mA, f=200MHz 500 MHz T CE C C V =12V, I =0, f=1.0MHz 4.0 pF ob CB E G V =12V, P =100mW, f=175MHz 10 dB pe CC in V =12V, P =1.0W, f=175MHz 50 % CC out P V =12V, P =1.0W, f=175MHz 100 mW in CC out R1 (4-June 2013)2N4427 SILICON NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (4-June 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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