2N4912 www.centralsemi.com SILICON DESCRIPTION: NPN POWER TRANSISTOR The CENTRAL SEMICONDUCTOR 2N4912 is a silicon NPN power transistor manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS C Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 1.0 A C Continuous Base Current I 1.0 A B Power Dissipation P 25 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 7.0 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V=80V 100 A CBO CB I V =80V, V=1.5V 100 A CEV CE EB I V =80V, V =1.5V, T=150C 1.0 mA CEV CE EB C I V=40V 500 A CEO CE I V=5.0V 1.0 mA EBO EB BV I=100A 80 V CEO C V I =1.0A, I=100mA 0.6 V CE(SAT) C B V I =1.0A, I=100mA 1.3 V BE(SAT) C B V V 1.0V, I=1.0A 1.3 V BE(ON) CE C h V =1.0V, I=50mA 40 FE CE C h V =1.0V, I=500mA 20 100 FE CE C h V =1.0V, I=1.0A 10 FE CE C h V =10V, I =250mA, f=1.0kHz 25 fe CE C f V =10V, I =250mA, f=1.0MHz 3.0 MHz T CE C C V =10V, I =0, f=100kHz 100 pF ob CB E R1 (2-September 2014)2N4912 SILICON NPN POWER TRANSISTOR TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (2-September 2014) www.centralsemi.com