2N5109 www.centralsemi.com SILICON DESCRIPTION: NPN RF TRANSISTOR The CENTRAL SEMICONDUCTOR 2N5109 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 3.0 V EBO Continuous Collector Current I 400 mA C Continuous Base Current I 400 mA B Power Dissipation P 1.0 W D Power Dissipation (T=75C) P 2.5 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V =35V, V=1.5V 5.0 mA CEV CE BE I V =15V, V =1.5V, T=150C 5.0 mA CEV CE BE C I V=15V 20 A CEO CE I V=3.0V 100 A EBO EB BV I=0.1mA 40 V CBO C BV I =5.0mA, R=10 40 V CER C BE BV I=5.0mA 20 V CEO C V I =100mA, I=10mA 0.5 V CE(SAT) C B h V =15V, I=50mA 40 210 FE CE C h V =5.0V, I=360mA 5.0 FE CE C f V =15V, I =50mA, f=200MHz 1200 MHz T CE C C V =15V, I =0, f=1.0MHz 3.5 pF ob CB E NF V =15V, I =10mA, f=200MHz 3.0 dB CE C G V =15V, I =50mA, f=200MHz 11 dB PE CE C R5 (4-February 2016)2N5109 SILICON NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R5 (4-February 2016) www.centralsemi.com