2N5114
2N5115
2N5116
www.centralsemi.com
DESCRIPTION:
SILICON
The CENTRAL SEMICONDUCTOR 2N5114, 2N5115,
P-CHANNEL JFETS
and 2N5116 are silicon P-Channel JFETs designed for
switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Gate-Drain Voltage V 30 V
GD
Gate-Source Voltage V 30 V
GS
Gate Current I 50 mA
G
Power Dissipation P 500 mW
D
Operating and Storage Junction Temperature T , T -65 to +200 C
J stg
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
2N5114 2N5115 2N5116
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
I V =20V - 500 - 500 - 500 pA
GSS GS
I V =20V, T=150C - 1.0 - 1.0 - 1.0 A
GSS GS A
I V=18V 30 90 - - - - mA
DSS DS
I V=15V - - 15 60 5.0 25 mA
DSS DS
I V =15V, V=12V - 500 - - - - pA
D(OFF) DS GS
I V =15V, V=7.0V - - - 500 - - pA
D(OFF) DS GS
I V =15V, V=5.0V - - - - - 500 pA
D(OFF) DS GS
I V =15V, V =12V, T=150C - 1.0 - - - - A
D(OFF) DS GS A
I V =15V, V =7.0V, T=150C - - - 1.0 - - A
D(OFF) DS GS A
I V =15V, V =5.0V, T=150C - - - - - 1.0 A
D(OFF) DS GS A
BV I=1.0A 30 - 30 - 30 - V
GSS G
V V =15V, I=1.0nA 5.0 10 3.0 6.0 1.0 4.0 V
GS(OFF) DS D
V I=1.0mA - 1.0 - 1.0 - 1.0 V
GS(f) G
V I=15mA - 1.3 - - - - V
DS(ON) D
V I=7.0mA - - - 0.8 - - V
DS(ON) D
V I=3.0mA - - - - - 0.6 V
DS(ON) D
r I =1.0mA, V =0 - 75 - 100 - 150
DS(ON) D GS
r V =0, I=0, f=1.0kHz - 75 - 100 - 150
ds(ON) GS D
C V =15V, V =0, f=1.0MHz - 25 - 25 - 25 pF
iss DS GS
C V =12V, V=0, f=1.0MHz - 7.0 - - - - pF
rss GS DS
C V =7.0V, V=0, f=1.0MHz - - - 7.0 - - pF
rss GS DS
C V =5.0V, V=0, f=1.0MHz - - - - - 7.0 pF
rss GS DS
R1 (4-March 2014)2N5114
2N5115
2N5116
SILICON
P-CHANNEL JFETS
ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted)
A
2N5114 2N5115 2N5116
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
t V =10V, V =12V, I =15mA, R=580 - 16 - - - - ns
on DD GS D L
t V =6.0V, V =7.0V, I =7.0mA, R=743 - - - 30 - - ns
on DD GS D L
t V =6.0V, V =5.0V, I =3.0mA, R=1.8k - - - - - 42 ns
on DD GS D L
t V =10V, V =12V, I =15mA, R=580 - 21 - - - - ns
off DD GS D L
t V =6.0V, V =7.0V, I =7.0mA, R=743 - - - 38 - - ns
off DD GS D L
t V =6.0V, V =5.0V, I =3.0mA, R=1.8k - - - - - 60 ns
off DD GS D L
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Source
2) Gate
3) Drain
MARKING: FULL PART NUMBER
R1 (4-March 2014)
www.centralsemi.com